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Undoped n-type MgZnO films were deposited on c-plane sapphire substrates by molecular-beam epitaxy and subsequently annealed in O at different pressures. After annealing at 3.03 × 10 Pa, oxygen content in the annealed films show increases and the films transform into p-type conduction. However, the decreases of oxygen content and the increases of electron concentration were obtained while the films annealed at 1.01 × 10 Pa or 2.05 × 10 Pa. The changes in intensity of the emission peak located at 2.270 eV are similar to the changes of the oxygen content in the films annealed at different pressures. According to the defect levels and the relationship between photoluminescence spectra and annealing condition, it was suggested that this emission peak was related to interstitial oxygen (O). The obtained p-type conduction is attributed to that the O acceptor can compensate oxygen vacancy and interstitial zinc donor. [ABSTRACT FROM AUTHOR]

Valence-band offset (VBO) of n-ZnO/p-NiO heterojunction has been investigated by x-ray photoelectron spectroscopy. Core levels of Zn 2p and Ni 2p were used to align the VBO of n-ZnO/p-NiO heterojunction. It was found that n-ZnO/p-NiO heterojunction has a type-II band alignment and its VBO is determined to be 2.60±0.20 eV, and conduction-band offset is deduced to be 2.93±0.20 eV. The experimental VBO value is in good agreement with the calculated value based on the electron affinity of ZnO and NiO. [ABSTRACT FROM AUTHOR]

The transport properties of field-effect transistors based on C60 fullerene peapods have been investigated and our findings indicate that the transport characteristics of single-walled carbon nanotubes (SWNTs) are highly sensitive to the encapsulated fullerenes due to the charge-transfer effect. Under light illumination, the photoinduced electron transfer characteristics are found in C60 peapods, which is different from those observed for empty SWNTs. The response characteristic of peapod devices to light is reflected in a shift of threshold voltage toward negative values, indicating an electron-doping process. After removing light the photoresponse is fully recoverable, indicating complete restoration of transferred electrons. [ABSTRACT FROM AUTHOR]

A white light polymer light-emitting diode was demonstrated with a double layer configuration: poly[N,N′-bis(4-butylphenyl)-N,N′-bis(phenyl)benzidine] (poly-TPD) blended with poly(N-vinylcarbazole) as both hole-transporting layer and electron-blocking layer, blue-emissive poly(9,9-dihexylfluorene-alt-co-2,5-dioctyloxy-para-phenylene) (PDHFDOOP) blended with green-emissive poly[6,6′-bi-(9,9′-dihexylfluorene)-co-(9,9′-dihexylfluorene-3-thiophene-5′-yl)] as an emissive layer. By annealing the emissive layer at a relatively high temperature, fluorenone defects were generated into PDHFDOOP, which formed an exciplex with poly-TPD, as a red emitter. The devices exhibit a maximum brightness of ∼4800 cd/m2 and a maximum luminous efficiency of ∼3 cd/A. Moreover, the Commission Internationale de L’Eclairage coordinates of the emitted light is close to that of pure white light and is insensitive to the applied voltages. [ABSTRACT FROM AUTHOR]