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Electrostatic discharge (ESD) reliability simulations at circuit-level are used to develop an approach for modeling the breakdown and snapback behavior of advanced MOSFET structures. The junction and gate leakage currents due to increased tunneling in the scaled-down CMOS technologies are described, and parameter extraction procedures for the model parameters are also presented.

Electrostatic discharge (ESD) reliability simulations at circuit-level are used to develop an approach for modeling the breakdown and snapback behavior of advanced MOSFET structures. The junction and gate leakage currents due to increased tunneling in the scaled-down CMOS technologies are described, and parameter extraction procedures for the model parameters are also presented.

A dual-bit trapping device, which solves most of the problems by using a split-gate structure, inspired by the HIMOS concept is presented. The device allows a high density thanks to dual-bit/cell storage and it is easily scalable since the structure is fully self-aligned and the bit areas are physically isolated.

The report stated that the key assumption in this model is that the trap-trap distance or trap-interface distance is the dominant parameter in the conduction mechanism causing anomalous charge loss. The oxide is characterized by a single parameter, the trap density. The studies stated that failure rate calculations are possible for different oxide qualities, thicknesses and voltage. Two-trap and three-trap percolation paths can limit the failure rate.

Three-dimensional simulation was applied to model the erasing operation in a realistic flash-electrically erasable programmable read only memory cell. The model was found to consistently determine the floating-gate potential and the influence of meshing aspects in the analysis of the band-to-band tunneling-generation rate. The experimental characteristics of the erasing process of the memory cell had been reproduced using only one fitting parameter, the height of the barrier between the polycrystalline Si and SiO2.