1. Long-wavelength vertical-cavity surface-emitting laser diodes
- Author
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Babic, D. I., Jayaraman, V., Margalit, N. M., Streubel, K., Heimbuch, M. E., Richard Mirin, Thibeault, B. J., Bowers, J. E., Hu, E. L., and Denbaars, S.
- Subjects
VCSEL ,Optics ,Electronics - Abstract
Long-wavelength (1300/1550 nm) vertical-cavity surface-emitting lasers (VCSELs) have been much more difficult to realize than VCSELs at shorter wavelengths such as 850/980 nm. The primary reason for this has been the low refractive index difference and reflectivity associated with lattice-matched InP/InGaAsP mirrors. A solution to this problem is to “wafer-fuse” high-reflectivity GaAs/AlGaAs mirrors to InP/InGaAsP active regions. This process has led to the first room-temperature continuous-wave (CW) 1.54 μm VCSELs. In this paper, we discuss two device geometries which employ wafer-fused mirrors, both of which lead to CW operation. We also discuss fabrication of WDM arrays using long-wavelength VCSELs.