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Your search keyword '"Svensson, Bengt G."' showing total 2 results
Start Over Author "Svensson, Bengt G." Topic electronics
2 results on '"Svensson, Bengt G."'

1. Integration of melting excimer laser annealing in power MOS technology

Author

Privitera, Vittorio, La Magna, Antonino, Spinella, Corrado, Fortunato, Guglielmo, Mariucci, Luigi, Cuscuna, M., Camalleri, Cateno Marco, Magri, Angelo, La Rosa, Giovanna, Svensson, Bengt G., Monakhov, Eduard V., and Simon, Frank

Subjects
Annealing -- Analysis, Semiconductor device, Business, Electronics, Electronics and electrical industries
Abstract

The integration of excimer laser annealing (ELA) into the power MOS device technology is discussed. It is seen that ELA can be applied as a reliable, effective and advantageous process in semiconductor device fabrication.

Published
2007

2. Palladium Schottky barrier contacts to the (0001)- and (1010)-face of hydrothermally grown n-ZnO.

Author

Grossner, Ulrike, Gabrielsen, Stig, Borseth, Thomas Moe, Grillenberger, Joachim, Kuznetsov, Andrej Yu., and Svensson, Bengt G.

Subjects
ELECTRON beams, ELECTRON optics, ELECTRONICS, ZINC oxide, PHYSICS
Abstract

Schottky barrier contacts have been formed by electron beam evaporation of Pd onto the polar (0001)- and the nonpolar (1010)-face of hydrothermally grown n-type single-crystalline ZnO. On both surfaces the contacts can be operated under reverse bias voltages up to -5 V. Thereby, the Pd/(1010)-ZnO system exhibits a larger rectification of the current than the Pd/(0001)-ZnO system. CV profiling reveals a nonuniform carrier concentration in the range between ∼ 2 × 1015 cm-3 and ∼ 5 × 1017 cm-3, depending on surface orientation. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR]

Published
2005
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