1. Magnetoresistance of ferromagnetic point junctions from tunneling to direct contact regimes
- Author
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Pandana, H., Gan, L., Dreyer, M., Krafft, C., and Gomez, R.D.
- Subjects
Scanning tunneling microscopy -- Research ,Magnetoresistance -- Research ,Electromagnetism -- Research ,Business ,Electronics ,Electronics and electrical industries - Abstract
The behavior of magnetoresistance in NiFe (permalloy) point junctions was investigated using an STM set-up, where the junction resistance was continuously varied from [10.sup.8] [OMEGA]-[10.sup.3] [OMEGA]. Our results reveal an enhancement of magnetoresistance of more than 80% at one conductance quantum, and the decaying magnetoresistance as one moves away from 12.9 k[OMEGA] to either the diffusive regime or the tunneling regime, as supported by independent theories on spin-dependent transport. The suppression of magnetoresistance with incorporation of a 35-nm-thick Au barrier was observed, as well as the dependence of magnetoreslstance on the relative orientations of the electrodes. Index Terms--Ballistic magnetoresistanee, magnetoresistance, scanning tunneling microscope (STM).
- Published
- 2004