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MBE-grown InGaAlAs-InP vertical cavity surface emitting lasers with buried tunnel junction for 1.55 µm wavelength, passivated with benzocyclobutene (BCB) and coplanar contacts, are presented. The devices show superior modulation bandwidths up to 11.6 GHz. Wide open eye diagrams with 6 dB extinction ratio enable error-free data transmission at 10 Gbit/s in back-to-back configuration and over different fibres. [ABSTRACT FROM AUTHOR]

Chirp characteristics of a 1.55 μm vertical-cavity surface-emitting laser (VCSEL) employing a buried tunnel junction are reported for the first time. From the measurements the linewidth enhancement factor αH is derived and presented. [ABSTRACT FROM AUTHOR]

A novel two-chip concept for an electrically pumped and micro-electro-mechanically tunable vertical-cavity surface-emitting laser, with an emission wavelength in the 1.5 μm range, is presented. Continuous tuning over 30 nm in singlemode operation has been shown. [ABSTRACT FROM AUTHOR]

The continuous-wave room-temperature operation of an electrically pumped 1.55 mm wavelength vertical-cavity surface-emitting laser (VCSEL) with up to 1.7 mW output power is reported. The laser comprises an optimised multi-quantum-well active region and an improved mirror design for reduced optical losses. [ABSTRACT FROM AUTHOR]