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The Field Soft Error Rate (FSER) has been determined by the variation of the critical charge and the measurement of the charge collection volume determined by alpha-particle irradiation. The modelled FSER versus critical charge dependence agrees well to the one of the Field Soft Error measurements. The results futher show, that the impact of the on-chip Alpha-Particle flux can be neglected.

A BSIM3v3.1 based flash memory degradation compact model for circuit simulators has been developed. By a physics based modification of the Fowler-Nordheim equation, the tunnel current can be calculated considering both positive and negative oxide charges. It has been shown that every known endurance characteristic can be simulated by this model. It allows a precise simulation of worst case operation of flash memories and an optimized circuit design.

A dynamic model has been developed that is based on the Preisach approach for ferroelectric capacitors. It accounts for different switching reaction of the dipoles dependent on the applied voltage gradients. A method for extracting the necessary parameters by measuring the coercive voltage versus applied frequency is provided. The model was verified by testing capacitors of different geometries. Excellent agreement was achieved between our measurements and the corresponding circuit simulations. The simulation of a FeRAM-cell with our new dynamic model shows that the bit line signal decreases substantially with fast read/write times.