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This paper proposes a digital-to-time converter (DTC)-assisted fractional-N wide-bandwidth all-digital phase-locked loop (ADPLL) with a fine-resolution time-to-digital converter (TDC). The TDC employs a two-channel time-interleaved time-domain register with an implicit adder/subtractor realizing an error-feedback topology. Such an error-feedback unit of a first-order $\Delta \Sigma $ -TDC can be cascaded as a multi-stage noise shaping configuration to achieve higher-order noise-shaping and, thereby, low in-band phase noise (PN) of the ADPLL. A digitally controlled oscillator with a transformer and a pair of cross-coupled NMOS amplifiers exploits magnetic and capacitive coupling to achieve nearly an octave frequency coverage, i.e., 1.73–3.38 GHz (after a $\div $ 2 division). Fabricated in 40-nm CMOS, the ADPLL achieves better than −110-dBc/Hz in-band PN and occupies an active area of 0.5 mm2. With a 50-MHz reference clock, a 2-GHz output RF clock, and a loop bandwidth of 800 kHz, this prototype achieves 420-fs $_{{\mathrm{rms}}}$ jitter, integrated from 1-kHz to 30-MHz offset, while drawing 10.7 mW.

In this paper, we propose a method to broaden a tuning range of a CMOS LC-tank oscillator without sacrificing its area. The extra tuning range is achieved by forcing a strongly coupled transformer-based tank into a common-mode resonance at a much higher frequency than in its main differential-mode oscillation. The oscillator employs separate active circuits to excite each mode but it shares the same tank, which largely dominates the core area but is on par with similar single-core designs. The tank is forced in common-mode oscillation by two injection locked Colpitts oscillators at the transformer's primary winding, while a two-port structure provides differential-mode oscillation. An analysis is also presented to compare the phase noise performance of the dual-core oscillator in common-mode and differential-mode excitations. A prototype implemented in digital 40-nm CMOS verifies the dual-mode oscillation and occupies only 0.12 mm2 and measures 56% tuning range.

A fault-tolerant quantum computer with millions of quantum bits (qubits) requires massive yet very precise control electronics for the manipulation and readout of individual qubits. CMOS operating at cryogenic temperatures down to 4 K (cryo-CMOS) allows for closer system integration, thus promising a scalable solution to enable future quantum computers. In this paper, a cryogenic control system is proposed, along with the required specifications, for the interface of the classical electronics with the quantum processor. To prove the advantages of such a system, the functionality of key circuit blocks is experimentally demonstrated. The characteristic properties of cryo-CMOS are exploited to design a noise-canceling low-noise amplifier for spin-qubit RF-reflectometry readout and a class-F2,3 digitally controlled oscillator required to manipulate the state of qubits.

We present an ultra-low-power Bluetooth low-energy (BLE) transceiver (TRX) for the Internet of Things (IoT) optimized for digital 28-nm CMOS. A transmitter (TX) employs an all-digital phase-locked loop (ADPLL) with a switched current-source digitally controlled oscillator (DCO) featuring low frequency pushing, and class-E/F2 digital power amplifier (PA), featuring high efficiency. Low 1/ f DCO noise allows the ADPLL to shut down after acquiring lock. The receiver operates in discrete time at high sampling rate (10 Gsamples/s) with intermediate frequency placed beyond 1/ f noise corner of MOS devices. New multistage multirate charge-sharing bandpass filters are adapted to achieve high out-of-band linearity, low noise, and low power consumption. An integrated on-chip matching network serves to both PA and low-noise transconductance amplifier, thus allowing a 1-pin direct antenna connection with no external band-selection filters. The TRX consumes 2.75 mW on the RX side and 3.7 mW on the TX side when delivering 0 dBm in BLE.

We present a digital-to-time converter (DTC)-assisted fractional-N wide-bandwidth all-digital PLL (ADPLL). It employs a MASH ΔΣ time-to-digital converter (TDC) to achieve low in-band phase noise, and a wide-tuning range digitally-controlled oscillator (DCO). Fabricated in 40nm CMOS, the ADPLL consumes 10.7 mW while outputting 1.73 to 3.38 GHz (after a ÷2 division) and achieves better than −109 dBc/Hz in-band phase noise and 420fs rms integrated jitter.

We propose a new transmitter architecture for ultra-low power radios in which the most energy-hungry RF circuits operate at a supply just above a threshold voltage of CMOS transistors. An all-digital PLL employs a digitally controlled oscillator with switching current sources to reduce supply voltage and power without sacrificing its startup margin. It also reduces 1/f noise and supply pushing, thus allowing the ADPLL, after settling, to reduce its sampling rate or shut it off entirely during a direct DCO data modulation. The switching power amplifier integrates its matching network while operating in class-E/F2 to maximally enhance its efficiency at low voltage. The transmitter is realized in 28 nm digital CMOS and satisfies all metal density and other manufacturing rules. It consumes 3.6 mW/5.5 mW while delivering 0 dBm/3 dBm RF power in Bluetooth Low-Energy mode. European Research Council

This paper proposes a new RF oscillator topology that is suitable for ultra-low voltage and power applications. By employing alternating current source transistors, the structure combines the benefits of low supply voltage operation of conventional NMOS cross-coupled oscillators together with high current efficiency of the complementary push-pull oscillators. In addition, the 1/f noise upconversion is also reduced. The 40nm CMOS prototype exhibits an average FoM of 189.5 dBc/Hz over 4–5 GHz tuning range, dissipating 0.5mW from 0.5V power supply, while abiding by the technology manufacturing rules.

This paper presents a CMOS temperature sensor intended for the temperature compensation of MEMS frequency references. It is based on a Wien bridge RC filter, whose phase-shift, due to the temperature dependency of the resistors used, is temperature dependent. This phase shift is then digitized by a phase domain sigma-delta modulator. The sensor was implemented in 0.18μm CMOS, consumes 36 μW and achieves 6mK resolution in a conversion time of 100msec. After batch calibration and a 3-point trim, it achieves ±0.15°C (3σ) inaccuracy over the industrial range (-40°C to 85°C).