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1. Optimized emitter-base interface cleaning for advanced Heterojunction Bipolar Transistors

Author

E. Brezza, F. Deprat, C. de Buttet, A. Gauthier, M. Gregoire, D. Guiheux, V. Guyader, M. Juhel, I. Berbezier, E. Assaf, L. Favre, P. Chevalier, C. Gaquière, N. Defrance, STMicroelectronics [Crolles] (ST-CROLLES), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Puissance - IEMN (PUISSANCE - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire Cycles Géochimiques et ressources (LCG), Géosciences Marines (GM), Institut Français de Recherche pour l'Exploitation de la Mer (IFREMER)-Institut Français de Recherche pour l'Exploitation de la Mer (IFREMER), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Hôpital Louis Pradel [CHU - HCL], Hospices Civils de Lyon (HCL), Declaration of competing interestThe authors declare that they have no known competing financial interests or personal relationships that could have appeared toinfluence the work reported in this paper., NO FUNDING FOUND, and Laboratoire commun STMicroelectronics-IEMN T1

Subjects
[PHYS]Physics [physics], [SPI]Engineering Sciences [physics], Materials Chemistry, Heterojunction Bipolar Transistor, Thermal treatment, Electrical and Electronic Engineering, Interface, SiconiTM etching, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Hydrofluoric acid etching
Abstract

International audience; A B S T R A C THeterojunction Bipolar Transistors needed for high-frequency applications require precise dopant control. Insitu doped epitaxies used during device fabrication rely on surface preparation to obtain an optimized dopingprofile. Defects due to imperfect cleaning relates to high emitter resistance and low-frequency noise.Base epitaxy is followed by the fabrication of thin L-shaped oxide spacers and in-situ arsenic-doped emitterepitaxy by Low Pressure Chemical Vapor Deposition. A cleaning step between spacers formation and emitterepitaxy is mandatory to remove residual contamination. Hydrofluoric acid (HF) wet cleaning, in-situ remoteplasma cleaning (SiconiTM) and thermal treatments have been tested. A minimum etching budget is sought forlimiting spacer consumption while adequately cleaning the interface.Time Of Flight-Secondary Ion Mass Spectroscopy (TOF-SIMS) and High-Resolution Transmission ElectronMicroscopy (HR-TEM) are used to characterize the interface and measure levels of arsenic, oxygen, fluorineand carbon. Emitter resistance and base-emitter breakdown voltage measurements are used to show the impacton electrical figures of merit. Siconi targeting 10 Å of thermal oxide removal followed by a thermal treatment(800 ◦C, 60 s) in the deposition chamber results the best process among the tested ones.

Published
2023

2. Scalable Modeling of Transient Self-Heating of GaN High-Electron-Mobility Transistors Based on Experimental Measurements

Author

Ali Soltani, Meriem Bouchilaoun, Samuel Graham, Georges Pavlidis, Hassan Maher, Christophe Rodriguez, Adrien Cutivet, Bilal Hassan, Francois Boone, Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), OMMIC, Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Optoélectronique - IEMN (OPTO - IEMN), and This work was supported in part by the Fonds quèbècois de la recherche sur la nature et les technologies (FRQNT) and in part by the Natural Sciences and Engineering Research Council of Canada (NSERC). The review of this paper was arranged by Editor R. Venkatasubramanian

Subjects
Materials science, Thermal resistance, Gallium nitride, High-electron-mobility transistor, 01 natural sciences, Temperature measurement, law.invention, [SPI]Engineering Sciences [physics], chemistry.chemical_compound, gate resistance thermometry (GRT), law, 0103 physical sciences, Thermal, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, high-electron-mobilitytransistors (HEMTs), business.industry, Transistor, modeling, Electronic, Optical and Magnetic Materials, chemistry, Gallium nitride (GaN), Logic gate, Optoelectronics, thermoreflectance, Transient (oscillation), business, transient temperature measurement
Abstract

International audience; Abstract:This paper details an extraction procedure to fully model the transient self-heating of transistors from a GaN HEMT technology. Frequency-resolved gate resistance thermometry (f-GRT) is used to extract the thermal impedance of HEMTs with various gate widths. A fully scalable analytical model is developed from the experimental results. In the second stage, transient thermoreflectance imaging (TTI) is used to bring deeper insights into the HEMTs' temperature distribution by individually extracting the transient self-heating of each finger. TTI results are further used to successfully validate the f-GRT results and the modeling of the thermal impedance. Overall, f-GRT is demonstrated to be a fast and robust method for characterizing the transient thermal characteristics of a GaN HEMT. For the first time to the authors' knowledge, a scalable model of the thermal impedance is extracted fully from experimental results.

Published
2019

3. 3D Modeling of Coils for Pulsed Field Magnetization of HTS Bulk Pellets in an Electrical Machine

Author

Mariusz Stepien, Alexandre Colle, Kévin Berger, Thierry Lubin, Boguslaw Grzesik, Jean Lévêque, Jakub Kapek, Groupe de Recherche en Energie Electrique de Nancy (GREEN), Université de Lorraine (UL), Department of Power Electronics, Electrical Drives and Robotics, Silesian University of Technology, The authors would like to acknowledge the 'Région Lorraine' for its financial support concerning the purchase of the pulsed current source. Jakub Kapek would like to thanks the Erasmus+ program for the funding of his internship in Nancy., and The authors would like to thank Rachid Dadi from VACUUMSCHMELZE GmbH for providing us with the VACODUR 50 material, and Salah Eddine Bentridi for the English proofreading of the final version of the paper.

Subjects
Cryostat, Transient state, Materials science, Inductor, 01 natural sciences, Magnetization, 0103 physical sciences, Electrical and Electronic Engineering, 010306 general physics, Inductance, Pulse measurements, 010302 applied physics, Superconductivity, Condensed matter physics, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Modeling, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Magnetic field, Superconducting rotating machines, [PHYS.COND.CM-S]Physics [physics]/Condensed Matter [cond-mat]/Superconductivity [cond-mat.supr-con], Very high field and NMR magnets, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Electromagnetic coil, Bulk conductors
Abstract

International audience; In this work, we propose to study and design a coil used to magnetize, by means of a Pulsed Field Magnetization (PFM) process, an inductor of a radial flux superconducting machine with one pair of poles. Each pole contains four similar HTS bulks of 30 mm diameter arranged in a square pattern. The cryostat already exists for this application and the temperature of the HTS bulks can vary from 4.2 K to their critical temperature, in transient state. For a given primary source of energy, here a capacitor bank of 10 kJ (5 mF, 2 kV) is available, the PFM process depends strongly on the value of the coil inductance used to generate pulsed field, because it defines the waveform of the current: peak value and time constant. Thus, 3D modeling of the coil is required in order to be sure that its inductance and the magnetic field produced will provide a full magnetization of HTS bulks. From the practical point of view, we would like to achieve an average magnetization of each pole around 3 T. In this paper, numerical modeling of coils with different number of turns coupled with circuit's equations is achieved. The maximum magnetic field obtained on the HTS bulks and estimated magnetization at the top center of each HTS bulk, are presented and discussed.

Published
2018

4. Electronic structure of atomically coherent square semiconductor superlattices with dimensionality below two

Author

Daniel Vanmaekelbergh, Christophe Delerue, Wiel H. Evers, Efterpi Kalesaki, Guy Allan, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), University of Luxembourg [Luxembourg], Delft University of Technology (TU Delft), Debye Institute for Nanomaterials Science, Utrecht University [Utrecht], This work has been supported by funding of the French National Research Agency [ANR, (ANR-09-BLAN-0421-01)]. E.K., C.D., and G.A. performed the calculations. W.H.E performed sample preparation and structural analysis. C.D. was a visiting professor at the Debye Institute for Nanomaterials Science at the time of this research. C.D. and D.V. supervised the project. All authors were involved in writing of the paper., and ANR-09-BLAN-0421,ETSFG(2009)

Subjects
Materials science, Spintronics, Condensed matter physics, business.industry, Superlattice, Physics [G04] [Physical, chemical, mathematical & earth Sciences], 02 engineering and technology, Electronic structure, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 7. Clean energy, 01 natural sciences, Electronic, Optical and Magnetic Materials, Atomic coherence, [SPI]Engineering Sciences [physics], Semiconductor, Physique [G04] [Physique, chimie, mathématiques & sciences de la terre], 0103 physical sciences, Nano, 010306 general physics, 0210 nano-technology, business, Quantum well, Curse of dimensionality
Abstract

The electronic structure of recently synthesized square superlattices with atomic coherence composed of PbSe, CdSe, or CdTe nanocrystals (NCs) attached along {100} facets is investigated using tight-binding calculations. In experimental realizations of these systems [W. H. Evers et al., Nano Lett. 13, 2317 (2013)], NC facets are atomically bonded, resulting in single-crystalline sheets, which, due to their nanogeometry, have an effective dimensionality below two. We predict electronic structures composed of successive bands formed by strong coupling between the wave functions of nearest-neighbor NCs. This coupling is mainly determined by the number of atoms at the NC bonding plane. The band structures deviate markedly from that of the corresponding two-dimensional (2D) quantum well; the 2D case can be recovered, however, if the effects of the nanogeometry are gradually reduced. The width of the bands can reach hundreds of meV, ascribing highly promising transport properties to square superlattices. The band edges are located at k=0 except for PbSe superlattices, where their position in k space surprisingly depends on the parity of the number of {100} atomic planes in the NCs. Our calculations demonstrate that semiconductors with dimensionality below two have a strong potential for (opto-)electronic, photovoltaic, and spintronic applications.

Published
2013