Search

The effect of the bias voltage Ub and the deposition rate $${v}$$ on the structure, grain size D, and coercivity Hc of NiFe films with a thickness d from 30 to 980 nm, grown on Si/SiO2 substrates by DC magnetron sputtering, has been studied. In the case of Ub = 0, a decrease in $${v}$$ from values $${v}$$ ≈ 27 to ≈7 nm/min is accompanied by an increase in the values of the critical film thickness dcr from dcr ≈ 220 nm to dcr ≈ 270 nm. In this case, Hc in films with d < dcr is characterized by the dependence Hc ~ D6 and varies from ~1 to ~20 Oe. For Ub = –100 V, the effect of the deposition rate on the coercivity is much more noticeable. At $${v}$$ = 7 and 14 nm/min, the films exhibit soft magnetic properties (Hc ≈ 0.15–1.4 Oe) and the absence of dcr for the entire range of studied thicknesses. The films obtained at $${v}$$ = 21 and 27 nm/min pass into the “supercritical” state at d ≥ dcr ≈ 520 nm, and in the range d < dcr they are characterized by the dependence Hc ~ D3 and an increase in the coercivity from ~0.35 to ~10 Oe.

The intrinsic microcrystalline silicon thin films were deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). Two series of films with different deposition rate 0.30 nm/s and 1.94 nm/s were prepared. The film surface and gas phase reaction growth processes were monitored with real-time spectroscopic ellipsometry and optical emission spectroscopy. The effect of deposition rate on the microcrystalline silicon thin film growth mechanism has been studied. The microcrystalline silicon surface growth was analyzed with KPZ model. The results show that the growth exponent of β is 0.448 for the films with low deposition rate, and the growth exponent of β is 0.302 for the films with high deposition rate. The growth exponent does not increase with deposition rate, but declines. And the reasons for this phenomenon were explained.

Microstructural and opto-electronic properties of thin films strongly depend on the deposition conditions (e.g. temperature, deposition rate). The 30 nm tin (Sn) layers were prepared using the physical vapor deposition technique. The tin layers were deposited on the Al2O3 - coated Si substrates at five different deposition rates in the range from 0.05 A/s up to 5.00 A/s. The influence of the deposition rate on the microstructure of the surface was investigated using atomic force microscope and scanning electron microscope. Changes in the microstructure of the Sn layers cause variations in its opto-electronic properties. These features were examined using spectroscopic ellipsometry measurements.

In the present study, ultra-conductive wires were produced by the cascaded Cu/MWCNT wire structure. Cascaded wires were prepared on the industrial 1 mm diameter Cu wire with two steps; Firstly, electrophoretic deposition (EPD) was used to deposit the functionalized MWCNT on the Cu wires. Secondly, a novel inverted cylindrical magnetron sputtering (ICMS) has been built to coat Cu on the MWCNT deposited Cu wire. Different number of cascaded layers up to 13 layers of Cu/MWCNT wires as well as different Cu coating parameter were produced. High deposition rate of MWCNT on Cu wires has been achieved by the EPD method. As can be seen from the cross-sectional SEM images, the intended cascaded structures were successfully formed. The ampacity of the 1 mm industrial Cu wire used in this study has increased by 9.2%. In addition, the temperature of the cascaded wires has shown slow increase compared to that of reference Cu wire. On the other hand, the maximum current able to carry with 1 degrees C temperature raise has increased by 50%., TUBITAK [315M239], The present study was funded by a TUBITAK project numbered 315M239.

Hot-wire chemical vapor deposition was utilized to develop rapidly grown and high-quality phosphorus-doped amorphous silicon (a-Si:H) thin films for poly-crystalline silicon on tunnel oxide carrier-selective passivating contacts. Deposition rates higher than 150 nm/min were obtained for the in situ phosphorus-doped a-Si:H layers. To optimize the passivating contact performance, material properties such as microstructures as well as hydrogen content were characterized and analyzed for these phosphorus-doped a-Si:H films. The results show that a certain microstructure of the films is crucial for the passivation quality and the conductance of passivating contacts. Porous silicon layers were severely oxidized during high-temperature crystallization, giving rise to very low conductance. The insufficient effective doping concentration in these layers also yields inferior passivation quality due to lack of field-effect passivation. On the other hand, dense silicon layers are insensitive to oxidation but very sensitive to blistering of the films during the subsequent high-temperature process steps. By optimizing the deposition parameters, a firing-stable-implied open-circuit voltage of 737 mV and a contact resistivity of 10 mΩ·cm2 were achieved at a high deposition rate of 100 nm/min while 733 mV and 90 mΩ·cm2 were achieved at an even higher deposition rate of 150 nm/min.

We report on the evolution of phase-separated morphologies in co-sputtered Cu-Mo films as a result of varying substrate temperature and deposition rate during deposition. A transition from vertically-oriented concentration modulations to laterally-oriented modulations followed by randomly-oriented modulations was observed in the Cu-Mo films because of changing substrate temperature at constant deposition rate. A refinement of the Cu-Mo domains was observed at increasing deposition rate at a constant substrate temperature. A coarsening of phase-separated domains was also observed with increasing substrate temperature. The phase separation kinetics that controlled film morphology were limited by the surface interdiffusion of each species as the film grew in thickness. Control over the surface interdiffusion length was achieved by altering the deposition temperature and material flux.

Showerhead is a typical and important part in a vertical plasma-enhanced chemical vapor deposition (PECVD) reactor. A contrast experiment with the same recipe but different showerhead configurations was carried out, where the effects of the blocked area, position and drilling depth of the arrayed holes on the full-wafer deposition rate and the ratio of nitrogen to silicon of the silicon-nitride thin film were examined. The results of the blocking-hole scheme demonstrate that: the deposition rate is higher under the blocked region; the gradients of the deposition rate in the edge-opened configurations are larger than those in the center-opened configurations; the tendency of the ratio of nitrogen to silicon goes up towards to the centroid in the edge-opened configurations. The results of the drilling-hole scheme show a similar characteristic, however, the gradients are much smoother than those in the blocking-hole scheme. These results indicate that it is a feasible way to globally or locally refine the qualities of the large-area thin film through tailoring or varying the drilling depth of the arrayed holes on the showerhead face plate. This paper contributes to the structural design for the large-area silicon-nitride thin-film PECVD rector with vertical showerhead, and can also be referred to the other large-area thin-film reactor with multi-hole arrayed showerhead.

Through-silicon-via (TSV) connection is a promising technology to provide more effective and faster data processing in integrated-circuit (IC) devices. In this study, via-filling processes with the direct ultrasonic agitation, the effects of additives (accelerator, suppressor and leveler) and different current densities are investigated. Microvias with a diameter of 20 μ m and a depth of 65 μ m is used in the electrodeposition process. The dynamic evolution of the via-filling process activated by ultrasonic under different current densities is obtained by scanning electron microscopy. It is found that the application of ultrasonic agitation can change the deposition rate of copper ion at the via and improve the filling process to obtain void-free TSVs. Under the action of ultrasonic agitation, the via-filling process under the condition of low, middle and high current density are explored to realize the "V" type filling, "U" type filling, void filling, respectively. In addition, the filling ratio and filling speed of copper in the vias under different conditions are also analyzed in this work.

FePt granular layers which are made in suitable conditions can have three types of ordering that are crystalline, compositional orders and directional configuration of nanoparticles. Formation of fct structure with L10 compositional ordering requires high temperature. At this temperature, a problem is the size control of the nanoparticles and another problem is control of their crystal orientation. Fabrication method and the use of suitable substrates can help solving these problems. In direct synthesis by sputtering method on the warm substrate the size of FePt nanoparticles in L10 compositional ordered phase can be controlled. We show that crystal orientation of L10-FePt nanoparticles on a thin layer of MgO depends on the rate of deposition. This becomes clear from the results of the XRD analyses of samples. Based on these results in synthesis at room temperature with deposition rate of upper than 1.5 A/s after annealing, (001) peak is dominated and at rate of lower than 1.0 A/s just (111) peak is appeared. In direct synthesis with intermediate rate (111) and (110) peaks can be seen. Moreover, the difference of the shape of hysteresis loops of samples in parallel and vertical directions are the witnesses for orientation of samples in presence of MgO layer and the effect of FePt deposition rate on it.

Atomic layer deposition (ALD) has been traditionally regarded as an extremely powerful but slow thin-film deposition technique. The (perceived) limitation in terms of deposition rate has resulted in a slow penetration of the technology into mass manufacturing beyond established applications in the semiconductor industry until recently. At present, several developments have resulted in a significant increase in the use of ALD in a number of mass manufacturing applications. On the one hand, there is an increasing demand from the device makers side to incorporate nanotechnology in their products that relies on the unique advantages of ALD. On the other hand, a number of technical improvements have been implemented in the ALD method allowing it to be much faster. In this article, we provide an overview of different high-throughput (HT) ALD approaches, putting them in perspective with other common HT deposition techniques already used in the industry. As an example, the use of HT ALD for the encapsulation of organic light-emitting diode is discussed.

Superconducting GdBa2Cu3O7 films with 2.5 wt% of BaHfO3 were deposited by pulsed laser deposition using an Nd:YAG laser ( λ = 355 nm), and their structural and electrical properties were investigated in dependence of substrate temperature T sub and deposition rate (i.e., laser repetition rate v dep). The irreversibility lines show the strongest shift toward higher magnetic fields at intermediate T sub and lower v dep. The self-field J c decreases by a factor of 2 compared with the pristine sample, but the situation improves in the high field region. The angular dependence of J c at 1, 5, and 9 T shows a large c -axis peak at 180o, which indicates strongly correlated pinning at BHO nanocolumns.

Koçkar, Hakan (Balikesir Author), A series of 50-nm binary FeCr martensitic thin films were sputtered from a single source made of commercial AISI 430 ferritic stainless steel under the deposition rates gradually increased from 0.03 to 0.11nm/s with 0.02nm/s steps at stationary condition. And, under 0.09nm/s deposition rate, a second series of the films were also deposited under the rotation speed of their substrates which was chosen at 0, 25, and 45rpm. As far as we are concerned, this study is the first investigation of properties of the thin films produced from AISI 430. The atomic Fe content in the films increased from 79.3 to 98.6% while atomic Cr content decreased from 20.5 to 1.2% with the increase of deposition rate from 0.03 to 0.11nm/s. According to compositional analysis, the Fe content increased while Cr content decreased with increasing deposition rate. The reason for this may be attributed to the relatively different bond energy/melting point of metals which have different contents sputtered from source material since this physical parameter is very significant for the sputtering process. And, the Fe content in the films decreased from 84.9 to 79.2at. % while the Cr content increased from 14.9 to 20.6at. % when the increase of rotation speed of substrate. The crystal structure of all films was observed to have a body-centered tetragonal phase and the intensity of (110) peak varied with the atomic Fe content. The surface observations of films performed by a scanning electron microscope exposed that the number of surface grains increased with the increase of deposition rate and decreased with the increase of rotation speed. According to surface roughness analysis done by an atomic force microscope, the roughness of the film surfaces increased as the deposition rate increased. And, the roughness of the film surfaces decreased as the rotation speed increased. This has been consistent with the grain size and roughness parameters. Thus, increasing deposition rate and decreasing rotation speed of the substrate caused an increase in grain size and roughness parameters. The magnetic measurements of the films achieved, by a vibrating sample magnetometer at room temperature, displayed that the saturation magnetization, M-s, values increased from 820.1 to 1700.4emu/cm(3), the remanence magnetization, M-r, values increased from 293 to 817emu/cm(3), and the coercivity, H-c, value also increased from 38 to 107Oe with the increasing of deposition rate. It is also seen that the magnetic easy axis are in the film plane due to the shape anisotropy. With the increase rotation speed, the values of M-s and M-r increased and the H-c decreased. It was seen that variation of Fe content in the films influences the M-s values and the H-c values are consistent with the surface properties. It was concluded that the deposition rate and the rotation speed of the substrate play a considerable role on the structural and related magnetic properties of the sputtered FeCr thin films, and the properties of the films can be easily controlled by changing production parameters., Balikesir University - 2016/149 Turkiye Cumhuriyeti Kalkinma Bakanligi - 2005K120170

The ionic liquid comprised of anhydrous aluminum chloride (AlCl3) and 1-ethyl-3-methylimidazolium chloride (EMIC) has attracted attention as an electrolyte for Al electrolysis. We have investigated the influence of the operating conditions on the deposition rate and the surface roughness of electrolytic Al foil by using the AlCl3-EMIC melt with/without 20 mmol dm−3 of an 1,10-phenanthroline anhydrate (OP) additive as the electrolyte. The cross-sectional SIM images revealed that the increase in the operating temperature affected the foil thickness and the OP addition affected the smoothness. At the operating temperature of 50 °C and the current density of 52.6 mA cm−2, the current efficiency was 90% or more and the deposition rate was about 0.9 μm min−1 regardless of the OP addition. An AFM image revealed that the surface roughness value of the Al foil obtained on the Ti plate substrate from the melt with the OP additive at 50 °C was 45.8 nm at the current density of 52.6 mA cm−2. The XRD patterns showed that the orientations of the (200) reflections became strong by the OP addition. A smooth Al foil was obtained even at a high current density by increasing the operating temperature and adding OP to the melt.

Reactive high-power impulse magnetron sputtering of tungsten oxide films using metallic tungsten target (72 mm in diameter) in argon-oxygen atmosphere (total pressure of 0.75 Pa) was carried out. The effect of various discharge parameters on the deposition rate and film oxygen concentration was investigated. Moreover, a model combining a reactive high-power impulse magnetron sputtering model and a discharge plasma model for the ionization region was successfully used for deeper insight into the effect of particular discharge parameters such as voltage pulse length (from 100 –800 µs), oxygen partial pressure (from 0.25–0.50 Pa) or the value of pulse-averaged target power density (from 2.5–500 W cm−2). The results of the presented model, most notably trends in the target- and substrate oxide fraction, composition of particle fluxes onto the substrate, degree of W atom ionization or degree of O2 molecule dissociation are discussed and put into context with experimentally measured quantities.

Titanium dioxide (TiO₂) films are deposited by atomic layer deposition (ALD) using titanium isopropoxide (TTIP) and H₂O as precursors. The operating instructions for the ALD equipment are described in detail, along with the settings for relevant parameters. The thickness of the TiO₂ film is measured, and thereby, the deposition rate is quantitatively estimated to verify the linearity of the deposition rate.

The structural and magnetic properties of Co/C60/pentacene and Co/C60 thin film structures were investigated. Atomic force microscopy and x-ray reflectivity analysis show that the presence or absence of a pentacene buffer layer leads to a highly textured or randomly oriented C60 layer, respectively. A Co film deposited on a randomly oriented C60 layer penetrates into the C60 layer when it is deposited at a slow deposition rate. The Co penetration can be minimized, regardless of the Co deposition rate, by growth on a highly textured and nanostructured C60/pentacene layer. Vibrating sample magnetometry measurements show that the saturation magnetization of Co/C60/pentacene is significantly reduced compared to that of Co/C60. On the other hand, the Co penetration does not seem to have an effect on the magnetic properties, suggesting that the structural properties of the Co and C60 layer, rather than the Co penetration into the organic C60 layer, are critical to the magnetic properties of the Co/C60.

Laser-Induction Hybrid Cladding (LIHC) was introduced to prepare metal silicide based composite coatings, and influence of different factors such as laser type, laser power, laser scan speed and induction preheating temperature on the coating deposition rate and laser energy efficiency was studied systematically. Compared with conventional CO 2 laser cladding, fiber laser-induction hybrid cladding improves the coating deposition rate and laser energy efficiency by 3.7 times. When a fiber laser with laser power of 4 kW was combined with an induction preheating temperature of 850 °C, the maximum coating deposition rate and maximum laser energy efficiency reaches 71 g/min and 64% respectively.

YBa2Cu3O7 − δ (YBCO) films were prepared at deposition rates ranging from 10 to 55μm h−1 on CeO2/LaMnO3/MgO/Gd2Zr2O7/Hastelloy C276 substrate by spray atomizing and coprecipitating laser chemical vapor deposition. At a deposition rate of 10 μm h−1, a c-axis-oriented YBCO film with a high critical temperature (TC) of 91 K and critical current density (JC) of 2.4 MA cm−2 was prepared, which showed an epitaxial growth mode of YBCO [001]//CeO2 [100] (YBCO [100]//CeO2 [011]). The full width at half maximum (FWHM) of the ω-scan and that of the φ-scan of the YBCO film were 1.9° and 3.2°, respectively. At a deposition rate of 45 μm h−1, an a-axis-oriented YBCO film with a TC of 78 K and a JC of 0.4 MAcm−2 was obtained. The YBCO film showed an epitaxial growth mode of YBCO [100]//CeO2 [100] (YBCO [001]//CeO2 [011]) and had the FWHM of 4.9° for the ω-scan and that of 9.5° for the φ-scan, respectively.

Localized electrochemical deposition (LECD) is a promising method for three-dimensional micro-/nanofabrication and, thus, the factors influencing LECD have been intensively investigated. This study examined the effect of sulfuric acid concentration on copper microcolumns deposited by LECD using a microanode with a diameter of 20 μm. With 0.05 mol l−1 sulfuric acid, the deposition voltage of the optimal deposited morphology of copper microcolumns was at 2.9 V, but the column diameter was larger than the anode diameter. With 0.5 and 2.0 mol l−1 sulfuric acid, the optimal deposited morphology of copper microcolumns were at 3.2 V and 3.4 V, respectively, but the diameters of the copper microcolumns were smaller than the anode diameter. In the LECD process, the deposition rate is proportional to the deposition voltage. Because of the hydrogen evolution, the deposition rates of copper microcolumns at high sulfuric acid concentration were lower than those at low and medium sulfuric acid concentrations. The results of this study indicated that the deposition rate obtained the optimal surface topography was 0.22 to 0.327 um s−1, which had reference significance to improve the quality of the copper microcolumns. The effect of sulfuric acid on the LECD was demonstrated using a competitive reduction mechanism.

We report a novel membrane surface modification method using a fast polydopamine coating (fPDAc) strategy. Specifically, NaIO4 was introduced in the coating process to accelerate the polydopamine deposition rate. Surface properties and separation performances of fPDAc-coated reverse osmosis membranes were characterized and compared to those obtained using the conventional slow polydopamine coating (sPDAc) strategy. Quartz crystal microbalance measurements showed greatly increased polydopamine deposition rate using the fPDAc method, resulting in a reduction of 97% coating time to reach an areal mass of 2000 ng/cm2. Both fPDAc and sPDAc enhanced the surface hydrophilicity and reduced the membrane surface charge. At relatively low areal mass deposition (

An analytical expression is obtained for the pressure distance product parameter that defines the pressure dependence of the deposition rate of sputtered atoms in the Keller–Simmons formula. The generalized Keller–Simmons formula is proposed, which can be used in the case when the 1D approach is not suitable for the simulation of the flux of sputtered atoms to a substrate. The generalized Keller–Simmons formula using the pressure distance product derived from the analytical expression allows one to simulate the pressure dependence of the deposition rate of sputtered atoms for different target materials and to simulate the chemical composition of a multicomponent film at different pressures and distances from a compound target to the substrate. Results of simulations using the generalized Keller–Simmons formula are in good agreement with the experiment.

Current trends indicate that mass production of high-quality, two-dimensional materials will likely be based on the use of on-surface synthesis (OSS) and/or chemical vapor deposition (CVD) on selected substrates. However, the success of these techniques heavily relies on a deeper understanding of terrace and perimeter diffusion of the adspecies across and around many self-generated, mobile clusters, and/or motionless islands with a variety of shapes (dendritic, compact, irregular, polygonal,...). We show that, for typical monolayer growth conditions at constant deposition rate, the total square distance traveled by all adsorbed particles departs from the total number of diffusion hops due to the onset of correlations between subsequent hops along the perimeters of a growing density of obstacles. As a result, we propose a new expression to determine the tracer diffusivity of the adparticles, directly providing a simple understanding of the temperature and coverage dependence of this observable. Most importantly, we describe the microscopic origin of the apparent diffusion barrier extracted from a typical Arrhenius plot at any given coverage., We acknowledge support by the Ramon y Cajal Fellowship Program by the Spanish Ministry of Science and Innovation, and the 2015/01 contract by the DIPC.

Changes in electrical resistance of silver films were measured in the range from 1013 to 103 Ω during thermal deposition on sapphire in a high vacuum, after the deposition over time, and under an applied voltage. The dependences of the electrical resistance of the films on their thickness and deposition rate were determined. It was established that, with an increase in the film thickness from 2 to 10 nm during the deposition at rates of 0.6 and 0.1 A/s, the resistance decreases by 7.5 and 4 orders of magnitude, respectively. The measured dependences of the resistance on the deposition time were found to be close to exponential. The room-temperature resistance of 10-nm-thick films deposited at different rates changed spontaneously by 3–4 orders of magnitude in different ways: the resistance of the slowly deposited films spontaneously increased, whereas in the rapidly deposited films, it spontaneously decreased. After fine annealing, the steady-state resistance changed also differently: it increased by 2 orders of magnitude in the former case and by 9 orders of magnitude in the latter case. Under voltages above 5 V, the resistance of the rapidly deposited films abruptly decreased from ∼1012 to ∼106 Ω, and these films became ohmic. After fine annealing, they became again high-ohmic. Under voltages above 5 V, the high-ohmic films thus obtained became again low-ohmic. This cycle of electrical conductivity switching was reproduced many times. The observed phenomena were explained in the framework of the hypothesis of the formation of fine metastable structures in channels of labyrinth films, namely, protrusions and bridges that bring together the boundaries of islands and connect them into conducting clusters, respectively.

YBa 2 Cu 3 O 7− δ (YBCO) films were prepared on a multilayer-coated Hastelloy C276 tape by laser chemical vapour deposition using liquid-source evaporation. The orientation of the YBCO films changed from a -axis to c -axis when the deposition temperature was increased from 1010 K to 1090 K. The c -axis-oriented YBCO film prepared at 1046 K exhibited critical temperature of 92 K and critical current density of 1.7 MA cm −2 at a deposition rate of 13 μm h −1 .

CeO 2 and YBa 2 Cu 3 O 7− δ (YBCO) films were prepared by laser chemical vapor deposition. The (100)-oriented CeO 2 films prepared at 975–1088 K consisted of columnar grains with pyramidal caps of the CeO 2 {111} planes. The deposition rate was 3.0–5.4 μm h −1 . The (110)-oriented YBCO films were prepared on the (100)-oriented CeO 2 films at a deposition temperature of 1004 K. The (110)-oriented YBCO films showed wedge-shaped grains.

Through silicon via (TSV) is a key structure of three-dimensional (3-D) IC integration. However, the fabrication of TSV still faces the challenge of void-free copper filling. In this study, a new suppressor cetyl trimethyl ammonium bromide (CTAB) with a low molecular weight is used as a suppressor for the TSV copper filling. The effect of various CTAB concentrations on the TSV filing ratio are studied. It is observed that low concentrations of CTAB (0.1 g/L) can inhibit the copper deposition. However, this does not occur at higher concentrations (0.5 g/L). Possible inhibitor mechanisms of CTAB at different concentrations were proposed. As only CTAB cannot fill the TSV completely, bis (3-sulfopropyl) disulfide (SPS) was added to increase the deposition rate at the bottom of the TSV. Finally, a TSV filling ratio prediction model based on LSV curves is established to enhance the filling ratio, and consequently, optimized concentrations of CTAB and SPS were found to realize a complete TSV filling.

Through‑silicon-via (TSV) is the key technology to realize the lower power consumption, higher performance, smaller packaging size in three-dimensional (3D) packaging process. In this study, the interaction effect of the suppressor concentration and the current density in the TSV filling process is investigated. The experiments of electroplate filling are performed using TSV with the size of 20 μm in width and 65 μm in depth. According to the test results, the filling rate, deposition rate and growth pattern are affected not only by the suppressor concentration but also by the current density. It is found that the optimal conditions for the TSV filling is at the current density of 0.5 ASD and the suppressor concentration of 0.1 g/L. The copper deposition rate is negatively correlated to the concentration of suppressor, and an inhibition limit of the suppressor exists for the copper deposition rate.

The influence of deposition parameters on the structure and magnetic properties of CoP/Cu composite wires had been studied systematically in this paper. These parameters hold a significant effect on the surface topography, coating composition, deposition rate, magnetic properties and giant magnetoimpedance (GMI) effect of the composite wires. The CoP/Cu composite wire is layered clearly, the coating is uniform and the soft magnetic properties is excellent, the largest value of field sensitivity (ξ) is 195%/Oe and the maximum GMI ratio is 902%, which is the highest GMI value of the CoP composites materials so far. This result will be great significance for further study of the application of magnetic sensors.

Properties of CrB2 thin diffusion layers sputtered in Mo/Si multilayer structures and their effect on the x-ray/EUV reflectance are reported. A special attention is paid to determine a critical thickness t* for barrier layers where they isolate parent layers of Mo and Si completely and to reveal the degree of interaction of the barrier material with parent materials. A dependence of t* on the deposition rate of CrB2 is found. CrSi2 and B3Si are established as the most probable phases formed in the barrier layers. The diffusion coefficients and temperature during formation of CrB2 are estimated. The use of thin CrB2 barriers is shown to be profitable in a fabrication of the EUV mirrors with enhanced reflectivity.

We studied hot-wall-type low-pressure chemical vapor deposition (LPCVD) equipment processing two wafers. The temperature distribution of the wafers and deposition rate of Si3N4 film in the LPCVD equipment were experimentally measured by changing parameters at 50 °C.Results showed that the steady-state temperature deviation of the two wafers was within ±1.0°C. Change of wafer temperature during a continual heating process was 0.7 °C by using the feed-forward control (FFC) method, which is less than half of that without the FFC method. The change of the deposition rate of the wafers during a continual deposition process was within 2% by using the FFC control method. The deviation of the deposition rate was reduced to ±1.3% by using the flip-flop flow of the process gas, which is 14% of that without the flip-flop flow.

In this study, we report the effects of deposition rate and composition of CoFeB on the magnetic properties of CoFeB/MgO/CoFeB structures. We found that the asymmetry exists not only in different deposition stack sequences (bottom structure Ta/CoFeB/MgO and top structure MgO/CoFeB/Ta), but also in different compositions of CoFeB. Co40Fe40B20 is more suitable for the bottom structure, while Co20Fe60B20 has better perpendicular magnetic anisotropy for the top structure. Based on the results The full pMTJ stacks of structure Ta 5/Co40Fe40B 1.3/MgO 1/Co20Fe60B20 2.2/Top layer (nm unit) were fabricated with different deposition rates and annealing temperatures. We found that low deposition rate (0.03 nm/s) can prevent overlapping magnetization reversal of both free and fixed layer. The antiferromagnetic coupling between the free and fixed layer was found to increase with annealing temperature which can be identified as the consequence of orange-peel coupling.

The effect of synthesis conditions on the deposition of amorphous hydrogenated carbon (a-C:H) is estimated. Based on the expressions obtained in the simulation, the effect of partial hydrogen pressures and rf-radiation power on the deposition rate, composition, and structure of the a-C:H films is explained. The model of nucleation and growth of amorphous and crystalline diamondlike materials is developed [1, 2]. The model is expected to simplify the search for optimal regimes for synthesizing the materials with the specified composition, structure, and properties.

TiO2-rich Ba-Ti-O films were prepared on Pt/Ti/SiO2/Si substrate by laser chemical vapor deposition (LCVD). Their phase relationship and microstructure were investigated. The single-phase BaTi2O5, Ba4Ti13O30 and BaTi5O11 films were prepared at Ti/Ba molar ratios mTi/Ba = 1.84–1.90, 2.83 and 4.49–4.55, respectively. The high deposition rate of TiO2-rich Ba-Ti-O films ranged from 54.0 μm/h to 177.6 μm/h. The permittivity of BaTi2O5 film (prepared at mTi/Ba = 1.84 and deposition temperature Tdep = 877 K), Ba4Ti13O30 film (prepared at mTi/Ba = 2.83 and Tdep = 914 K) and BaTi5O11 film (prepared at mTi/Ba = 4.49 and Tdep = 955 K) were 50, 40 and 21, respectively.

Atmospheric-pressure chemical vapor deposition of silicon carbide in a tubular hot-wall reactor using a polymeric source was studied. A three-dimensional model of the reactor was solved numerically based on the finite-volume method. To achieve the best desired conditions, the effects of substrate temperature, mass fraction of polycarbosilane (–Si[CH3]2–), inlet velocity, and substrate location on the SiC deposition rate were considered. These effects were investigated to obtain the optimum conditions by using the design of experiments (DoE) method. Finally, several contours are presented to help designers find suitable reactor conditions for higher performance.

We report the deposition of Nb2O5 films on unheated BK-7 glass substrates using remote plasma sputtering system. The remote plasma geometry allows pseudo separation of plasma and target bias parameters, which offers complete deposition rate control. Using appropriate oxygen flow rates, high-density and low-loss Nb2O5 films are deposited with rates up to 0.49 nm/s. Lower deposition rates (∼0.026 nm/s) can also be obtained by working at low target current and voltage and at low pressure. Nb2O5 films deposited at different rates have the refractive index of about 2.3 and the extinction coefficient as low as 6.9×10−5.

A novel process for atomic layer deposition of thulium oxide (Tm2O3) has been developed, employing TmCp3 as metal precursor and H2O as oxidizing agent. The use of a highly reactive oorganometallic ...

The growth peculiarity of Sc thin film is simulated by a three-dimensional kinetic Monte Carlo method. The simulation results show that the surface root-mean-square roughness of Sc thin films is increased with the increasing of the deposition rate. The number of initial nucleus of Sc thin films is decreased gradually with the increasing of deposition temperature, and the size of the Sc grains gets larger with the increasing of the deposition temperature. The optimal deposition rate and deposition temperature of Sc thin film are predicted to be 10 ML/s or 3.308 nm/s, and 700 K, respectively.

High efficiency and high open-circuit voltage ( V OC ) ITO/boron subphthalocyanine chloride (SubPc)/C 60 /bathocuproine/Al organic photovoltaic devices were fabricated in this study. Molecular packing was adjusted by controlling the deposition rate of SubPc, thus influencing the energy level of SubPc, which not only increased the energy level difference from the LUMO level of C 60 to the HOMO level of SubPc, but also reduced the energy barrier between the ITO/SubPc interface and diminished the accumulation and recombination of holes in SubPc, resulting in considerable improvement in both the V OC (1.02 V) and fill factor (65.37%) of the device, and a 3.96% final efficiency of the device.

This paper describes the evolution of the microstructure and conductivity of electroless copper deposition on a glass substrate for applications in electronics manufacture. The glass was activated using a (3-aminopropyl)trimethoxysilane pre-treatment followed by a Pd/Sn catalyst. Surface morphology of the deposited copper films was characterized using a dual beam focused ion beam field emission scanning electron microscope, and together with atomic force microscopy, showed clearly that the roughness and grain size tended to increase with the plating time. Film thickness measurements showed a high initial deposition rate, which slowed to a constant level as the thickness increased above 100 nm. This corresponded with the resistivity of the films which decreased rapidly as the thickness increased from 20 to 100 nm, but then remained largely stable at a level approximately twice that of bulk copper.

In this paper, indium tin oxide (ITO) targets with different densities were used to deposit ITO thin films. The thin films were deposited from these targets at room temperature and annealed at 750°C. Microstructural, electrical, and optical properties of the as-prepared films were studied. It was found that the target density had no effect on the properties or deposition rate of radiofrequency (RF)-sputtered ITO thin films, different from the findings for direct current (DC)-sputtered films. Therefore, when using RF sputtering, the target does not require a high density and may be reused.

BaTi5O11 films were prepared on Pt/Ti/SiO2/Si substrates by a laser chemical vapor deposition method. The effect of laser power (P L) on microstructure and dielectric properties of the BaTi5O11 films was investigated. With increasing P L from 62 to 108 W, the deposition temperature (T dep) monotonously increased from 872 to 951 K. At T dep = 920 K (P L = 90 W), the BaTi5O11 film had $$ (\overline{3} 01) $$ preferred orientation. At T dep ≥ 938 K (P L ≥ 98 W), the preferred orientation changed to $$ (\overline{3} 22)/(\overline{2} 23) $$ . The deposition rate (R dep) was 154.8–177.6 μm h−1. With increasing T dep, the surface morphologies changed from rectangular to pyramidal, and the dielectric constant (e r) increased from 18.3 to 21.4 at 1 MHz and 300 K.