1. Structural and noise characterization of VO[sub 2] films on SiO[sub 2]/Si substrates.
- Author
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Baıdakova, M. V., Bobyl’, A. V., Malyarov, V. G., Tret’yakov, V. V., Khrebtov, I. A., and Shaganov, I. I.
- Subjects
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VANADIUM oxide , *THIN films , *SILICON compounds , *ELECTROMAGNETIC noise - Abstract
Multi-technique structural and electro-physical investigations of VO[sub 2] films on SiO[sub 2]/Si substrates are carried out to study the microscopic nature of fluctuator defects — sources of low-frequency flicker noise. It is established that the noise intensity is determined by the magnitude of the microstress fluctuations 〈ε〉={〈(δc/c)[sup 2]〉}, where c is the lattice parameter along the c-axis parallel to [011] direction in the blocks of which the film is formed. The dimensions of the blocks were determined in the direction of the c-axis (t[sub c]∼1000 Å). The suggestion is put forward that the samples contain two types of fluctuator defects: 1) V atoms jumping between the two nearest interstitial sites and 2) V atoms jumping between these interstitial sites near lattice defects. [ABSTRACT FROM AUTHOR]
- Published
- 1997
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