1. Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes
- Author
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Ban, Keun-Yong, Hong, Hyun-Gi, Noh, Do-Young, Sohn, Jung Inn, Kang, Dae-Joon, and Seong, Tae-Yeon
- Subjects
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LIGHT emitting diodes , *ELECTROLUMINESCENT devices , *LIGHT sources , *OHMIC contacts - Abstract
Abstract: We report on the formation of reflective and low resistance Ag-based contacts to p-GaN using Ir interlayers for GaN-based near UV flip-chip light emitting diodes (FCLEDs). The as-deposited Ir/Ag contacts give non-linear current–voltage (I–V) behaviors. However, the contacts become ohmic with specific contact resistance of ∼10−4 Ωcm2 when annealed at temperatures 330–530°C for 1min in air. The 530°C-annealed Ir/Ag contacts give a reflectance of ∼75% at a wavelength of 405nm, which is somewhat higher than that (∼71%) of annealed single Ag contacts. It is also shown that the output power of the LEDs made with the annealed Ir/Ag contact is higher than that with the annealed single Ag contact. [Copyright &y& Elsevier]
- Published
- 2006
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