1. Effects of the p-AlInGaN/GaN superlattices' structure on the performance of blue LEDs
- Author
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Ji Xiaoli, Liu Na, Guo Enqing, Liang Meng, Yi Xiaoyan, Wang Junxi, Si Zhao, Li Jinmin, Liu Zhiqiang, Feng Xiang-Xu, Lu Hongxi, Wei Xuecheng, and Zhang Ning
- Subjects
Materials science ,business.industry ,Superlattice ,Semiconductor device ,Electroluminescence ,Nitride ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,law.invention ,law ,Materials Chemistry ,Optoelectronics ,Electrical and Electronic Engineering ,business ,Luminescence ,Quantum well ,Diode ,Light-emitting diode - Abstract
The advantages of the p-AlInGaN/GaN superlattices' (SLs) structure as an electron blocking layer (EBL) for InGaN blue light-emitting diodes (LEDs) were studied by experiment and APSYS simulation. Electroluminescence (EL) measurement results show that the LEDs with the p-AlInGaN/GaN SLs' structure EBL exhibited better optical performance compared with the conventional AlGaN EBL due to the enhancement of hole concentration and hole carrier transport efficiency, and the confinement of electrons' overflow between multiple quantum-wells (MQWs) and EBL.
- Published
- 2014