Author: "Detchprohm, T." / Topic: electroluminescence - Searchworks@Jio Institute Digital Library Search Results

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Start Over Author "Detchprohm, T." Topic electroluminescence

Author: Senawiratne, J., Zhu, M., Zhao, W., Xia, Y., Li, Y., Detchprohm, T., and Wetzel, C.
Subjects: GALLIUM nitride, QUANTUM well devices, PHOTOLUMINESCENCE, CATHODOLUMINESCENCE, ELECTROLUMINESCENCE, PHOTOCONDUCTIVITY
Published: 2007

Author: Detchprohm, T., Xia, Y., Senawiratne, J., Li, Y., Zhu, M., Zhao, W., Xi, Y., Schubert, E. F., and Wetzel, C.
Subjects: INDIUM gallium nitride, LIGHT emitting diodes, CATHODOLUMINESCENCE, ELECTROLUMINESCENCE, SPECTRUM analysis, SEMICONDUCTOR lasers
Published: 2007

Author: Li, Y., Zhao, W., Xia, Y., Zhu, M., Senawiratne, J., Detchprohm, T., and Wetzel, C.
Subjects: ELECTROLUMINESCENCE, LOW temperatures, STARK effect, QUANTUM wells, MOLECULAR beam epitaxy
Published: 2007

Author: Senawiratne, J., Chatterjee, A., Detchprohm, T., Zhao, W., Li, Y., Zhu, M., Xia, Y., Li, X., Plawsky, J., and Wetzel, C.
Subjects: *LIGHT emitting diodes, *SEMICONDUCTORS, *TEMPERATURE effect, *GALLIUM nitride, *EPITAXY, *CATHODOLUMINESCENCE, *FINITE element method, *THERMAL conductivity
Abstract: Abstract: The junction temperature of homoepitaxial green and blue GaInN/GaN quantum well light emitting diode (LED) dies is analyzed by micro-Raman, photoluminescence, cathodoluminescence mapping, and forward-voltage methods and compared to finite element simulations. Dies on GaN substrate and sapphire were analyzed under variable drive current up to 200mA (246A/cm2). At 100mA, dies on bulk GaN remain as cool as 355K (83°C) while dies on sapphire heat up to 477K (204°C). The efficiency droop and spectral line shift in green LEDs with increasing current density can now be separated into electrical and thermal contributions. [Copyright &y& Elsevier]
Published: 2010
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