1. Near infrared electroluminescence from p-NiO/n-InN/n-GaN light-emitting diode fabricated by PAMBE.
- Author
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Zhao, Yang, Wang, Hui, Gong, Xiaoyang, Li, Qiuze, Wu, Guoguang, Li, Wancheng, Li, Xinzhong, and Du, Guotong
- Subjects
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PERFORMANCE of light emitting diodes , *MOLECULAR beam epitaxy , *MAGNETRON sputtering , *NEAR infrared radiation , *HETEROJUNCTION bipolar transistors - Abstract
Near infrared light-emitting diode (LED) based on p-NiO/n-InN/n-GaN was realized by plasma-assisted molecular beam epitaxy (PAMBE) combined with radio frequency (rf) magnetron sputtering. The device exhibited diode-like rectifying current–voltage characteristics with a turn-on voltage of 1.0 V. Under forward bias, prominent near infrared (NIR) emissions were observed at peak around 1570 nm at room temperature. The NIR emission was ascribed to the band-edge emission of InN epilayer based on the photoluminescence spectrum and band diagram of the heterojunction. Moreover, the study of the LED in terms of the stability was also discussed. [ABSTRACT FROM AUTHOR]
- Published
- 2017
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