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Abstract: In this article, we report the application of a non-vacuum based direct printing technique of electrohydrodynamic atomization (EHDA) for the deposition of single-walled carbon nanotube (SWCNT) thin films of 90nm thickness onto flexible polyethersulfone (PES) substrates. The optimization of EHDA process to achieve a stable cone jet for the uniform deposition of SWCNT thin films is discussed in detail. The physico-chemical characterization of SWCNT thin films has been carried out using X-ray diffraction, UV–vis spectroscopy and Fourier-transform infra red spectroscopy techniques. The field emission scanning electron microscope studies revealed the surface morphology of SWCNT thin films. Further, the electrical study of the SWCNT thin films exhibited a linear ohmic behavior at room temperature as well as at elevated temperatures. [Copyright &y& Elsevier]

Highlights: [•] Electrohydrodynamic atomization of AgNWs embedded PEDOT:PSS thin film. [•] A detailed optimization process for deposition of AgNWs/PEDOT:PSS is presented. [•] X-ray diffraction pattern confirmed the presence of AgNWs in polymer matrix. [•] Surface morphology shows the uniform structure of AgNWs embedded PEDOT:PSS matrix. [Copyright &y& Elsevier]

This paper describes resistive switching in ZnSnO 3 thin film deposited by electrohydrodynamic atomization. The field emission scanning electron microscope analysis showed uniform surface morphology for thin films. The active layer, a thin film comprised of ZnSnO 3 nano-cubes was printed between screen printed silver (Ag) electrodes on glass substrate. Resistive switching behavior of the Ag/active layer/Ag sandwich structure was confirmed by current voltage analyses. The 3×3 array of memristors thus fabricated, showed characteristic OFF to ON (high resistance to low resistance) transition at low voltages, when operated between ±2 V, at 100 nA compliance currents. The memristor array exhibited stable room temperature current–voltage hysteresis, low power operation, retentivity in excess of 24 h. An R OFF / R ON ≈10:1 was observed at V Read =100 mV for more than 100 voltage stress cycles. All memory bits showed similar current voltage characteristics with respect to resistive switching parameters. [ABSTRACT FROM AUTHOR]

Here, we report a simple method to achieve binder free nickel oxide (NiO) thin film using an electrohydrodynamic atomization (EHDA) process. The optimization of process parameters to obtain uniform thin film is discussed in detail. The high surface purity of nanostructured NiO film is oriented in the face centered cubic structure. The surface morphology revealed uniform deposition of anisotropic nanoplatelets morphology. The cyclic voltammetry and electrochemical impedance spectroscopy confirm the pseudocapacitance behavior of NiO film with a specific capacitance of 178 F/g. The cyclic test exhibits a good cyclic retention of 94% for 1200 cycles. [ABSTRACT FROM AUTHOR]

Abstract: The insulating active layer has a vital role in the MIM (Metal–Insulator–Metal) structure of resistive switch (memristor). Different fabrication technologies are being used to the deposition of the active layer to explore the resistive switching in metal oxides. Electrohydrodynamic atomization (EHDA) has been used in this brief to deposit an active layer for the printed resistive switch (memristor). A thin liquid jet of solution containing ZrO2 (Zirconium Dioxide) nanoparticles was generated through a metallic capillary with a constant flow rate under the electrical forces. Liquid jet was further disintegrated into small droplets, containing nanoparticles, under the influence of electrical stresses and were collected on the ITO coated PET (Polyethylene Terephthalate) to form uniform layer of ZrO2 nanoparticles. A smooth thin film was observed with an average thickness of 67nm. Resistive (memristive) behavior was observed in the deposited thin film with ITO (Indium-Tin Oxide) as a bottom electrode and Ag as a top electrode. Bipolar reversible resistive switching was analyzed by setting different current compliances. Results reveal that EHDA has full potential to fabricate the active layer in resistive switches for printed electronics. [Copyright &y& Elsevier]

Abstract: This paper presents the deposition of solution based composite P3HT:PCBM thin film on PEDOT:PSS coated ITO substrate via electrohydrodynamic atomization (EHDA) technique. Deposition conditions such as stable cone jet formation, flow rate and applied potential have been investigated. X-ray diffraction anlaysis revealed the presence of P3HT polymer in the as deposited film. Surface morphology investigated using a field emission-scanning electron microscope confirms that a uniform deposition of thin films was achieved. The current–voltage characteristics of the as deposited films show a rectifying behavior. The capacitance–voltage study indicated capacitance of the as deposited thin films depended on the frequency . [Copyright &y& Elsevier]

Abstract: This article presents an attractive printing technique for thin film deposition of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) on flexible substrates known as electrohydrodynamic atomization (EHDA). Optimum flow rate and applied potential for stable cone jet mode has been confirmed through identification of process operating envelop. The uniformity and film thickness has been investigated by a field emission scanning electron microscope. The thin film shows nearly 75–82% transmittance in visible region. The electrical study shows good ohmic behavior of PEDOT:PSS thin film with the resistivity of approximately 49.6 mΩ cm. [Copyright &y& Elsevier]

Abstract: In this study, highly transparent, 250nm thick films of Aluminum doped Zinc-oxide (ZnO:Al) are achieved on glass substrates at ambient conditions through a solution processing technique called electrohydrodynamic atomization. A 10wt.% monodispersed solution containing 6% ZnO:Al nanoparticles (ZnO/Al2O3) in ethanol has been synthesized first and then used in the deposition process as the working solution. Pure and uniform transparent films with an average transmittance of 93% have been deposited with crystal structure exhibiting both zincite and gahnite phases. Surface composition purity has been confirmed using X-ray photoelectron spectroscopy technique and the clear indication of Zn-2p and Al-2p peaks confirms surface integrity. Fourier Transform Infrared analysis further confirms the presence of aluminum in the samples. The electrical properties are studied by recording and analyzing the current–voltage (I–V) measurements and the resistivity has been estimated from the slope of the IV-curve which is approximately 25mΩ.cm. The layer roughness has been characterized using atomic force microscopy. [Copyright &y& Elsevier]

Abstract: In this paper, we are reporting the fabrication of memristor device (Ag/TiO2/Cu) using electrohydrodynamic inkjet printing technology. The titanium oxide (TiO2) active layer was deposited using electrohydrodynamic atomization technique. The metal electrodes were patterned by using electrohydrodynamic printing technique. The crystalline nature, surface morphology and optical properties of as deposited TiO2 films were characterized using X-ray diffraction (XRD), scanning electron microscope (SEM) and UV-visible spectroscopic analysis respectively. XRD and SEM studies revealed that the presence of anatase TiO2 with uniform deposition. The optical transmittance of the deposited TiO2 films was observed to be 87% in the visible region. The fabricated memristor device (Ag/TiO2/Cu) exhibits bipolar resistive switching behavior within the low operating voltage (± 0.7V). Our results ensure that the printed technology provides breakthrough solution in the electronic memory device fabrication. [Copyright &y& Elsevier]

Abstract: Zinc oxide (ZnO) is a useful material in the fabrication of many electronic devices because of its wide band-gap, excellent transparency and high electron mobility. Thin films of ZnO have been fabricated where an alcosol solution containing 7wt.% ZnO nano-particles was synthesized and subjected to controlled flow through a metal capillary exposed to an electric field at the ambient temperature to generate an electrohydrodynamic jet, which subsequently disintegrated into droplets thereby depositing a uniform thin film of zinc oxide on the glass substrates with an average thickness of 115nm at a constant substrate speed of 0.25mm/s. Pure and perfectly uniform transparent films with an average transmittance of 88% have been deposited with wurtzite crystal structure and an electrical resistivity of approximately 64Ω.cm. [Copyright &y& Elsevier]