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Free-form factor optoelectronics is becoming more important for various applications. Specifically, flexible and transparent optoelectronics offers the potential to be adopted in wearable devices in displays, solar cells, or biomedical applications. However, current transparent electrodes are limited in conductivity and flexibility. This study aims to address these challenges and explore potential solutions. For the next-generation transparent conductive electrode, Al-doped zinc oxide (AZO) and silver (AZO/Ag/AZO) deposited by in-line magnetron sputtering without thermal treatment was investigated, and this transparent electrode was used as a transparent organic light-emitting diode (OLED) anode to maximize the transparency characteristics. The experiment and simulation involved adjusting the thickness of Ag and AZO and OLED structure to enhance the transmittance and device performance. The AZO/Ag/AZO with Ag of 12 nm and AZO of 32 nm thickness achieved the results of the highest figure of merit (FOM) (Φ550 = 4.65 mΩ−1) and lowest roughness. The full structure of transparent OLED (TrOLED) with AZO/Ag/AZO anode and Mg:Ag cathode reached 64.84% transmittance at 550 nm, and 300 cd/m2 at about 4 V. The results demonstrate the feasibility of adopting flexible substrates, such as PET, without the need for thermal treatment. This research provides valuable insights into the development of transparent and flexible electronic devices. [ABSTRACT FROM AUTHOR]

High-throughput transparent and flexible electronics are essential technologies for next-generation displays, semiconductors, and wearable bio-medical applications. However, to manufacture a high-quality transparent and flexible electrode, conventional annealing processes generally require 5 min or more at a high temperature condition of 300 °C or higher. This high thermal budget condition is not only difficult to apply to general polymer-based flexible substrates, but also results in low-throughput. Here, we report a high-quality transparent electrode produced with an extremely low thermal budget using Xe-flash lamp rapid photonic curing. Photonic curing is an extremely short time (~ μs) process, making it possible to induce an annealing effect of over 800 °C. The photonic curing effect was optimized by selecting the appropriate power density, the irradiation energy of the Xe-flash lamp, and Ag layer thickness. Rapid photonic curing produced an ITO–Ag–ITO electrode with a low sheet resistance of 6.5 ohm/sq, with a high luminous transmittance of 92.34%. The low thermal budget characteristics of the rapid photonic curing technology make it suitable for high-quality transparent electronics and high-throughput processes such as roll-to-roll. [ABSTRACT FROM AUTHOR]

For the realization of high conductive and transparent electrodes on flexible substrates, indium tin oxide(ITO), Ag, and ITO were sequentially deposited on polyethylene terephthalate(PET) and a Q-switched Nd:YVO4laser was used for direct etching of the ITO–Ag-ITO films. Considering the complementary relationship between transmittance and conductivity, Ag was deposited for different sputtering times and the laser etched results were also compared and analyzed. Considering the laser etched shape, the ITO–Ag-ITO electrodes were patterned with the optimized laser beam condition. From the current-voltage characteristics and multi-meter measurement, much lower resistances were obtained from electrically isolated ITO-Ag-ITO electrode. [ABSTRACT FROM PUBLISHER]

Abstract: The laser direct patterning technique is one of the new methods of direct etching process to replace the conventional photolithography. In this experiment, a Q-switched diode-pumped Nd:YVO4 (λ =1064nm) laser was used to produce the indium–tin oxide (ITO) patterns with a complex T-shaped structure on glass substrate. The results showed that the overlapping rate of laser beam had a major effect on the quality of the edge of the ITO electrode. When the overlapping rate was about 75%, it was possible to obtain optimum linearity in the edge of patterned ITO electrode. By using the optimum conditions of 75% overlapping rate, 500mm/s scanning speed, and 40kHz repetition rate, an alternative current plasma display panels (AC PDPs) with T-shaped ITO electrode was fabricated and characterized. The discharging results showed that the AC PDPs with the laser ablated T-shaped ITO electrode had a better discharging characteristics compared to the conventional sample with wet-etched stripe-type ITO electrode. [Copyright &y& Elsevier]

Abstract: For cost effective fabrication and time of alternative current plasma display panels (AC PDPs), an indium tin oxide (ITO) layer was patterned directly with a Q-switched diode pumped Nd:YVO4 laser (λ =1064nm). As experimental results, 500mm/s scan speed with 40kHz repetition rate was suitable for the application to AC PDP ITO electrode. In comparison with the chemically wet-etched ITO patterns by photolithography method, laser-ablated ITO patterns showed the formation of shoulders at the edge of the ITO lines and a ripple-like structure of the etched bottom. By dipping the laser-ablated ITO films in the chemical etching solution for 30s at 50°C, the shoulders were effectively removed without affecting the discharging properties of AC PDP. [Copyright &y& Elsevier]