Search

We propose a simple and efficient model using a phenomenological fitting parameter for current-voltage sweeps to describe vacancy dynamics in oxide resistive devices, and thereby to explain the relation between physical state and resistance in these devices. The fitting parameter serves as a figure of merit, describing a device’s capability for multibit operation. The understanding achieved through this model allows efficient evaluation of device performance factors including the maximum ON/OFF ratio and the multiresistance property. [ABSTRACT FROM AUTHOR]

Graphene oxide (GO)–cysteamine–Ag nanoparticles (GCA)–silver nanowire (AgNW) fabricated by depositing GCA over sprayed AgNWs on PET films were proposed for transparent and flexible electrodes, and their optical, electrical, and mechanical properties were analyzed by energy-dispersive X-ray spectroscopy, Fourier-transform infrared spectroscopy, Raman spectroscopy, atomic force microscopy, scanning electron microscopy, transmission electron microscopy, current-voltage measurements, and bending test. GCA–AgNW electrodes show optical transmittance of >80% at 550 nm and exhibit a high figure-of-merit value of up to 116.13 in the samples with sheet resistances of 20–40 Ω/◻. It was observed that the detrimental oxidation of bare AgNWs over time was considerably decreased, and the mechanical robustness was improved. To apply the layer as an actual electrode in working devices, a Pt/GO/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate/GCA–AgNW/polyethylene terephthalate structure was fabricated, and resistive switching memory was demonstrated. On the basis of these results, we confirm that the proposed GCA–AgNW layer can be used as transparent and flexible electrode. [ABSTRACT FROM AUTHOR]

We report the demonstration of multilevel operation using Cu/Cu-GeTe/W nonvolatile resistive memory devices for enhanced storage density. We incorporated Cu atoms into GeTe solid-electrolyte switching layers in Cu/Cu-GeTe/W nonvolatile resistive memory devices by applying a bias to the sample holder during a radio-frequency sputtering process. By analyzing the dependence of the device current (resistance) on both the pulse input voltage magnitude and width, we achieved four distinct resistance levels that correspond to the 2-bit operation of a single memory cell. Moreover, a model was suggested and discussed to account for the observed multibit operation. [ABSTRACT FROM PUBLISHER]