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Your search keyword '"Fabienne Allain"' showing total 2 results
Start Over Author "Fabienne Allain" Topic electrical resistivity and conductivity
2 results on '"Fabienne Allain"'

1. Evaluation Of Ni(Si1-xGex) and Pt(Si1-xGex) Contact Resistance for FD-SOI PMOS Metallic Source and Drain

Author

Fabienne Allain, Fabrice Nemouchi, V. Carron, Maud Vinet, Yves Morand, Jean-Francois Damlencourt, D. Lafond, Emilie Bourjot, Sophie Bernasconi, and Olga Cueto

Subjects
Resistive touchscreen, Materials science, business.industry, Transistor, Contact resistance, Silicon on insulator, Salicide, law.invention, PMOS logic, law, Electrical resistivity and conductivity, Electronic engineering, Optoelectronics, Process window, business
Abstract

To improve 20nm FD-SOI pMOS transistor performances, salicide process must be optimized on SiGe source&drain. In this paper, we propose an investigation on Ni and Pt/Si1-xGex (x=0.15, 0.3) systems. In a first part, process window is studied to determine thermal budget domain where the less resistive phase is stable morphologically and thermically. Solid state reactions in terms of phase sequence, thermal stability and morphology have been examined. At high temperature, two kinds of degradations have been observed. In Ni case, Ge out diffusion leads to the film agglomeration. In Pt case, grain coalescence degrades germanosilicide film. In a second part, contact resistivity has been extracted on lateral germanosilicides thanks to new designed structures. After a validation on Pt/Si system, RC extraction has been carried out on Si1-xGex substrate up to 30% of Ge. RC seems to be better with Pt compared to Ni with the same conditions of process optimizations.

Published
2013
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2. Considerations on Fermi-depinning, dipoles and oxide tunneling for oxygen-based dielectric insertions in advanced CMOS contacts

Author

Magali Gregoire, Emmanuel Nolot, H. Grampeix, M. Vinet, Fabienne Allain, J.P. Barnes, E. Ghegin, Claude Tabone, Louis Hutin, Philippe Rodriguez, Emmanuel Dubois, Fabrice Nemouchi, Yves Morand, J. Borrel, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), STMicroelectronics, Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire commun STMicroelectronics-IEMN T4, and Microélectronique Silicium - IEMN (MICROE SI - IEMN)

Subjects
Materials science, business.industry, Oxide, Insulator (electricity), Dielectric, Atomic layer deposition, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], Semiconductor, chemistry, Electrical resistivity and conductivity, Electronic engineering, Optoelectronics, business, Silicon oxide, Quantum tunnelling
Abstract

International audience; We present experimental and simulated J-V characteristics of Metal/Insulator/Semiconductor (MIS) junctions aiming at improving the contact resistivity for advanced CMOS nodes. We show that an Atomic Layer Deposition (ALD)-based Al2O3 process may induce a native silicon oxide regrowth leading to an additional tunneling resistance in series. A modelling-based analysis of Metal/Insulator/Insulator/Metal (MIIS) contacts, including the potentially beneficial interfacial dipole, provides a new outlook on high-kappa/SiO2 bilayers for low resistivity contacts.

Published
2016
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