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The synthesis, thermal behavior and electrical properties of a series of undoped and 1% Ga- or Y-doped lanthanum manganite compounds, obtained via the sol–gel technique, are reported. Scanning electron microscopy (SEM/EDX), X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FT-IR) analyses were performed on all synthesized samples. The XRD results confirmed a good crystallinity for all studied samples, and a change in the crystal structure of Ga- or Y-doped lanthanum manganite (Pm-3m space group) was observed compared to the pristine sample (R-3c space group). Thermal analysis highlighted a different behavior of the doped samples compared to the undoped sample, observed by the different mass losses in the analyzed temperature range. For these materials, it is shown for the first time that the static electrical conductivity, σDC, of Ga- or Y-doped LaMnO3 compounds increases compared to the σDC of the pristine sample, and the thermal activation energy of the process of electrical conduction, EA,cond, increases linearly with the temperature for all three studied samples. [ABSTRACT FROM AUTHOR]

This work reports the change in the structural and electrical behavior of partial substitution of manganese by palladium in LaMnO3 perovskite materials synthesized through sol–gel method. X-ray diffraction analysis reveals that all the obtained materials crystallize in the orthorhombic perovskite structure (Pnma space group). Morphological investigations show the presence of fine nanometric particles of similar shape and high tendency to agglomerate, and the elemental analysis highlights the presence of palladium. Detailed study of complex impedance measurements in the frequency range 20 Hz–2 MHz and different temperatures between (30 and 120) °C indicate the presence of electrical relaxation in materials; the activation energy of relaxation decreases from 0.207 eV (0.05% Pd–LMO–Pd1) to 0.102 eV (0.15% Pd–LMO–Pd3) when the x concentration of Pd increases from 0.05 to 0.15. The electrical conductivity analyses indicate that the conduction mechanisms in the low-frequency range (f < 100 kHz) are activated thermally and were explained using the Mott's variable-range-hopping (VRH) model. In the high-frequency range (f > 100 kHz), the conduction mechanism is due to the charge carriers hopping between the nearest neighboring states, in agreement with the CBH model (correlated barrier hopping). Based on this model, the bandgap energy, Wm was determined. The results show that by increasing the Pd concentration, the value of Wm of the sample increases, from 0.229 eV (LMO–Pd1) to 0.298 eV (LMO–Pd3), in agreement with the decreasing of electrical conductivity of samples. Highlights: Partial substitution of Mn by palladium in LaMnO3 perovskite materials. Heat treatment was performed at low temperature. Detailed studies of impedance and electric conductivity have been performed. [ABSTRACT FROM AUTHOR]