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Abstract: Nickel oxide (NiO) thin films were prepared on glass substrates at various bias voltages using dc reactive magnetron sputtering technique. The influence of substrate bias voltage on structural, optical and electrical properties was systematically investigated using X-ray diffraction (XRD), SEM, EDS, spectrophotometer and Hall effect studies. The NiO films are crystalline with preferential growth along (200) plane. The NiO films exhibit optical transmittance of 55% and direct band gap of 3.78eV at the substrate bias voltage of −75V. The electrical resistivity decreases as substrate bias voltage increases from 0 to −75V thereafter it was slightly increased. [ABSTRACT FROM AUTHOR]

Abstract: Cadmium indate films were deposited by dc reactive magnetron sputtering onto glass substrates in an oxygen partial pressure of 5×10−4 mbar and at various substrate temperatures in the range 373–673 K. The influence of substrate temperature on the structural, electrical and optical properties of the films was systematically studied. The films formed at substrate temperatures <423 K were amorphous while those deposited at ≥423 K were polycrystalline with cubic spinel structure. The decrease of electrical resistivity and increase of Hall mobility with the increase of substrate temperature were due to the improvement in the crystallinity of the films. The temperature dependence of Hall mobility measurements indicated that the grain boundary scattering of charge carriers was predominant in the films. The films formed at a substrate temperature of 673 K exhibited an electrical resistivity of 3.5×10−4 Ω cm, Hall mobility of 29 cm2 V−1 s−1, optical transmittance of 88%, optical band gap of 3.28 eV and figure of merit of 5×10−2 Ω−1. [Copyright &y& Elsevier]