1. A 'thru-short' method for noise de-embedding of MOSFETs
- Author
-
Koen Mouthaan, Ban-Leong Ooi, Jinglin Shi, Yong-Zhong Xiong, Lan Nan, and Ammar Issaoun
- Subjects
Engineering ,business.industry ,Electrical engineering ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Noise ,MOSFET ,Electronic engineering ,Embedding ,Parasitic extraction ,Electrical and Electronic Engineering ,business ,TO-18 ,Microwave - Abstract
A “thru-short” noise de-embedding method for MOSFETs is presented. The capability of the “thru-short” method has been validated through a comparison of measured and de-embedded noise parameters using different methods. It is shown that the “thru-short” method is reliable for on-wafer de-embedding of both S-parameters and noise parameters up to 18 GHz. Noise contributions from the parasitics due to the contact pads and interconnections surrounding the MOSFET can be determined and removed accurately. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1379–1382, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24330
- Published
- 2009
- Full Text
- View/download PDF