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Diamond color centers have been widely studied in the field of quantum optics. The negatively charged silicon vacancy (SiV−) center exhibits a narrow emission linewidth at the wavelength of 738 nm, a high Debye–Waller factor, and unique spin properties, making it a promising emitter for quantum information technologies, biological imaging, and sensing. In particular, nanodiamond (ND)-based SiV− centers can be heterogeneously integrated with plasmonic and photonic nanostructures and serve as in vivo biomarkers and intracellular thermometers. Out of all methods to produce NDs with SiV− centers, ion implantation offers the unique potential to create controllable numbers of color centers in preselected individual NDs. However, the formation of single color centers in NDs with this technique has not been realized. We report the creation of single SiV− centers featuring stable high-purity single-photon emission through Si implantation into NDs with an average size of ∼20 nm. We observe room temperature emission, with zero-phonon line wavelengths in the range of 730–800 nm and linewidths below 10 nm. Our results offer new opportunities for the controlled production of group-IV diamond color centers with applications in quantum photonics, sensing, and biomedicine.

The recent discovery of room temperature intrinsic single-photon emitters in silicon nitride (SiN) provides the unique opportunity for seamless monolithic integration of quantum light sources with the well-established SiN photonic platform. In this work, we develop a novel approach to realize planar waveguides made of low-autofluorescing SiN with intrinsic quantum emitters and demonstrate the single-photon emission coupling into the waveguide mode. The observed emission coupling from these emitters is found to be in line with numerical simulations. The coupling of the single-photon emission to a waveguide mode is confirmed by second-order autocorrelation measurements of light outcoupled off the photonic chip by grating couplers. Fitting the second-order autocorrelation histogram yields $g^{(2)}(0)=0.35\pm0.12$ without spectral filtering or background correction with an outcoupled photon rate of $10^4$ counts per second. This demonstrates the first successful coupling of photons from intrinsic single-photon emitters in SiN to monolithically integrated waveguides made of the same material. The results of our work pave the way toward the realization of scalable, technology-ready quantum photonic integrated circuitry efficiently interfaced with solid-state quantum emitters., 10 pages, 5 figures