Search

Pb2BiS2I3 (I), Sn2BiS2I3 (II), and Sn2BiSI5 (III) are prepared by solid state reaction of stoichiometric amounts of PbS and BiI3 for (I) (silica tube, 500 °C, 72 h; ≈90% yield) and from a 2:1:2:3.15 molar mixture of Sn, Bi, S, and I2 for mainly (II) and minor amounts of (III) (evacuated silica tubes, 500 °C, 24 h). [ABSTRACT FROM AUTHOR]

Single crystals of the new compounds LaOs2Al2B (I) and La2Os2AlB2 (II) are grown from stoichiometric amounts of the elements in a La/Ni eutectic flux (alumina crucible covered with quartz wool in evacuated silica tubes, 1000 °C, 12 h; cooling from 850 to 650 °C within 84 h). [ABSTRACT FROM AUTHOR]

EuIr4In2Ge4 is prepared by flux melting of the elements in the molar ratio of Eu:Ir:Ge:In = 1:1:1:30 (alumina crucible in evacuated silica tubes, 1000 °C, 12 h; cooling to 550 °C over 2 d). [ABSTRACT FROM AUTHOR]

AGeI3 (A: Cs+ (I), MeNH3+ (II), HC(NH2)2+ (III), CH3C(NH2)2+ (IV), C(NH2)3+ (V), Me3NH+ (VI), iPrNH3+ (VII)) polar hybrid inorganic/organic semiconductors are prepared from a solution of GeI4 in aqueous HI and H3PO2 by precipitation and crystallization through the addition of stoichiometric amounts of AI (stirring at 120 °C until half of the solution is evaporated, 25 °C, 24 h, 80-90% yield). [ABSTRACT FROM AUTHOR]

Plate-like crystals of LaPtGe2 are grown from a stoichiometric melt of the elements in an In flux (Al2O3 crucible in evacuated silica tubes, 1. [ABSTRACT FROM AUTHOR]

Single crystals of [Pb2BiS3][AuTe2], known as the naturally occurring mineral buckhornite, are grown by a self-flux method using the elements in stoichiometric amounts (evacuated quartz tubes, 850 °C, 2 h; cooling to 650 °C within 3 d). [ABSTRACT FROM AUTHOR]

LiPbSb3S6 is prepared by stoichiometric solid state reaction of Li2S, Pb, Sb, and S (evacuated carbon-coated silica ampule, 800 °C, 2 h, quenching; 98% yield). [ABSTRACT FROM AUTHOR]

The title compounds (MII: Mg, Zn, Cd, Hg; MIV: Ge, Sn), prepared by flame-melting rapid cooling reactions or by a traditional tube furnace synthesis with <90% yields, are characterized by single crystal XRD, SEM, solid state UV/VIS spectroscopy, Raman spectroscopy, electrical resistivity and photoconductivity measurements, and DFT calculations. [ABSTRACT FROM AUTHOR]

The title compound is prepared from a mixture of Cu, Na2S, BaS, and S (Pyrex tube, 500 °C, 4 d, 75% yield) and characterized by single crystal and powder XRD, SEM, Raman and IR spectroscopy, electrical and magnetic measurements, and DFT band structure calculations. [ABSTRACT FROM AUTHOR]

The new semiconducting halide-chalcogenide [(Bi4Te4Br2) (Al2Cl5.46Br0.54)]Cl2 (I) is synthesized by reacting Bi, Te, and excess AlCl3 in [emim]Br (closed glass vial, 165 °C, 5 d; 74% yield). [ABSTRACT FROM AUTHOR]

In the frame of a search for potential candidates of X-ray and γ-ray semiconductor detectors, the quaternary chalcohalides Hg3Q2Bi2Cl8 (Q: S (I), Te (II), Se (III)) are quantitatively obtained by solid state reaction of stoichiometric mixtures of HgQ, HgCl2, and BiCl3 (evacuated silica tube, (I) 300 °C, 1.5 d, (II) 200 °C, 2 d, (III) 600 °C, 2 d) avoiding their tendency for phase separation. [ABSTRACT FROM AUTHOR]

The new layered title compound is synthesized by solid state reaction of In, HgS, Cs2S, and sulfur (silica tube, 600 °C for 24 h, 800 °C for 8 h; 70% yield). [ABSTRACT FROM AUTHOR]