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In this work, fundamental results on carrier statistics in a carbon nanotube treated as a one-dimensional material are presented. Also the effect of degeneracy on the capacitance of the carbon nanotube channel in a carbon nan-otube field effect transistor is discussed. A quantum capacitance as well as a classical capacitance is revealed. Furthermore it is shown that for low gate voltage, the total capacitance is equivalent to the classical capacitance but for high gate voltage it is equivalent to the quantum capacitance. We predict that in the nondegenerate regime, the total capacitance is equivalent to the classical capacitance and that the quantum capacitance can be neglected, whereas only quantum capacitance needs to be taken into account in the calculation of the total capacitance in the degenerate regime. [ABSTRACT FROM AUTHOR]

In this paper we discuss the energy band structure of bilayer graphene nanoribbons (BGNRs) near the Fermi level between zero and 3kBT away from the conduction and valence bands. BGNRs can be used as the channel in field effect transistors (FETs). A FET can be created using graphene bilayers with the gate voltage perpendicular to the layers. We focus on carrier statistics in the degenerate regime and the density of states, and consider them to be fundamental properties of BGNRs. The model presented indicates that the normalized Fermi energy in the degenerate regime strongly depends on carrier concentration and is independent of temperature. [ABSTRACT FROM AUTHOR]

In this paper, the carrier concentration for bilayer graphene is modelled. The effect of an applied interlayer voltage V on the bandgap and carrier concentration is analysed using a new analytical approach. We begin by modelling of the density of states followed by carrier concentration as a function of V. It is found that as V increases, carrier concentration and the bandgap also increase. [ABSTRACT FROM AUTHOR]