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The lithium ion battery is considered as the experimental object, and its discharge characteristics are studied. A model of the battery in different charge-states is established by a tool of neural network while battery's rebound voltage, temperature and load are set as input parameters. The validity of the model is tested based on the experimental data. The accuracy, adaptability and stability of the SOC in this model is validated in a variety of the working conditions, and the accuracy of the model is demonstrated to be higher than 5%. [ABSTRACT FROM AUTHOR]

To study the ignition characteristics of semiconductor bridges (SCB) for automobile airbag igniters, a model was proposed to compute the electrical characteristics of SCB based on the structural characteristics, resistance properties, and the working process of the bridge. Numerical simulation was conducted to analyze the voltage and current trends at two ends of bridges with various geometric dimensions and those with identical geometric dimensions and oxide layers of different thicknesses. Voltage-current curves for bridges of three different dimensions were obtained through numerical simulation. Bridges of larger geometric dimensions were found to require higher voltage to reach the melting point, which means higher energy input is required. [ABSTRACT FROM AUTHOR]

A Semiconductor Bridge (SCB) explosive initiator has many advantages such as shorter action time, better ignition consistency and higher reliability. The development of a SCB has traditionally been guided by an experimental approach. Experiments conducted worldwide show that the melting and vaporization of a SCB when heated by an electrical current is a very complex physical process. In this process, the bridge goes through multi-phase changes, i.e., in order solid, liquid, gaseous and plasma-state. This paper discusses the numerical simulation of the SCB working process when driven with a short low-energy pulse. In an effort to elucidate the behaviors of the SCB working process, the temperature distribution before the SCB melting and SCB discharge are presented. The basic semiconductor equations and heat transfer equation are described to evaluate the temperature distribution in the SCB. The results are obtained from finite-difference implementations. The edge gasification effect of SCB is proved by the curve of temperature distribution, and the double temperature characteristic of SCB is shown. Finally, a SCB discharge model is established. The result shows that the bigger the external voltage, the longer is the discharge time. [ABSTRACT FROM PUBLISHER]