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Gain and offset represent two important measures to determine the accuracy of a comparator. Thus, analysis on these parameters is very important as they offer designers better understanding of the circuit and allow exploring trade-offs during design. In this paper, two methods were presented to derive a set of design equations that describe the gain, sensitivity, offset, and systematic mismatches observed in typical comparator circuits. A three-stage, fast complementary metal-oxide semiconductor (CMOS) comparator structure is analysed and simulated in order to validate the proposed methods. A 0.13 μm CMOS technology is used for simulations with 1.5 V supply voltage. Bisection theorem was used for gain and sensitivity analysis. Simulation results show that high gain improvement can be possible by using the design equations. The input offset voltage, due to mismatch in the width of the metal oxide semiconductor field-effect transistors (MOSFET) (W) and mismatches in the threshold voltages of the N and P type MOSFETs(VTHN, VTHP), is analysed using a proposed balanced method. The same comparator structure is used for the input offset voltage analysis. Simulations show that an offset improvement can be achieved following the design equations found through the proposed method. [ABSTRACT FROM PUBLISHER]

Fundamental characteristics of on-chip micro solar cell (MSC) structures were investigated in this study. Several MSC structures using different layers in three different CMOS processes were designed and fabricated. Effects of PN junction structure and process technology on solar cell performance were measured. Parameters for low-power and low-voltage implementation of power management strategy and boost converter based circuits utilizing fractional voltage maximum power point tracking (FVMPPT) algorithm were determined. The FVMPPT algorithm works based on the fraction between the maximum power point operation voltage and the open circuit voltage of the solar cell structure. This ratio is typically between 0.72 and 0.78 for commercially available poly crystalline silicon solar cells that produce several watts of power under typical daylight illumination. Measurements showed that the fractional voltage ratio is much higher and fairly constant between 0.82 and 0.85 for on-chip mono crystalline silicon micro solar cell structures that produce micro watts of power. Mono crystalline silicon solar cell structures were observed to result in better power fill factor (PFF) that is higher than 74% indicating a higher energy harvesting efficiency. [ABSTRACT FROM AUTHOR]

This paper presents a new very low-power, low-voltage successive approximation analog to digital converter (SAR ADC) design based on supply boosting technique. The supply boosting technique (SBT) and supply boosted (SB) circuits including level shifter, comparator, and supporting electronics are described. Supply boosting provides wide input common mode range and sub-1 Volt operation for the circuits designed in standard CMOS processes that have only high-V MOSFETs. A 10-bit supply boosted SAR ADC was designed and fabricated in a standard 0.5 μm, 5 V, 2P3M, CMOS process in which threshold voltages of NMOS and PMOS devices are +0.8 and −0.9 V, respectively. Fabricated SB-SAR ADC achieves effective number of bits (ENOB) of 8.04, power consumption of 147 nW with sampling rate of 1.0 KS/s on 1 Volt supply. Measured figure of merit (FOM) was 280 fJ/conversion-step. Proposed supply boosting technique improves input common mode range of both SB comparator and SAR ADC, allows sub-1 Volt operation when threshold voltages are in the order of the supply voltage, and achieves low energy operation. Thus, SBT is suitable for mixed-signal circuit designed for energy limited applications and systems in where supply voltage is in the order of threshold voltages of the process. [ABSTRACT FROM AUTHOR]

A compact power-on-reset pulse generator (POR-PG) circuit with a low-power and low-voltage operation capability is presented. Proposed POR-PG was fabricated in 0.5 μm 2P3M CMOS process. It was determined from simulations and measurements that proposed POR-PG works supply voltage levels between 1.8 V and 3.3 V and supply voltage rise times between 100 ns and 1 ms. POR-PG has very small silicon footprint. Layout size of proposed POR-PG circuit was 120 μm × 5 μm in 0.5 μm CMOS process. Comparing with other POR-PG circuits in the literature, proposed design enjoys lowest power consumption (< 6 μW), smallest silicon footprint, widest supply voltage range, and additional features such as brown-out detection capability. These achieved by using a unique cascadable POR delay element that consumes very low-power. [ABSTRACT FROM AUTHOR]