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Ferroelectric resistive switching has recently attracted considerable attention as a promising candidate for next-generation non-volatile memory. In this work, we report an electro and photon double-driven bipolar resistive switching behavior in Pt /Bi 0.9 Eu 0.1 FeO 3 (BEFO) /Nb-doped SrTiO 3 (NSTO) heterostructures prepared via pulsed laser deposition. In addition to the polarization-based control of the resistive memory, a switchable photovoltaic effect is observed that can be used to detect the polarization direction non-destructively. Significantly, the electric field-modulated interfacial barrier can be further affected by photon-generated carriers. This phenomenon is attributed to the barrier modulation in the Pt /BEFO and BEFO /NSTO interfaces by electric field and photon excitation. These results indicate the feasibility of non-volatile and non-destructive readout from ferroelectric memory. [ABSTRACT FROM AUTHOR]

A NiFe 2 O 4 (NFO) thin film was epitaxially grown on Nb doped (001) SrTiO 3 (NSTO) single-crystal substrate by pulsed laser deposition to form a Pt/NFO/NSTO/In heterostructure. This heterostructure exhibits stable bipolar resistive switching, well retention and multilevel memory properties. The maximum ratio of high resistance to low resistance is up to 1 × 10 3 . Different high and low resistance states and their corresponding different magnetization can be observed at the same time upon applying different voltages. The close correlation between the resistance state and magnetism shows a possible novel magnetoelectric coupling and modulation. Studies reveals that carrier injection-trapped/detrapped in the defect energy levels of the NFO/NSTO heterostructure interface is the major origin of the resistive switching, while the redox reaction of Ni 2+ caused by oxygen vacancies play a vital role in regulating the magnetism. This study demonstrates that this Pt/NFO/NSTO heterostructure shows potential application in the non-volatile multilevel resistive switching memory and novel magnetoelectric coupling and sensing devices. [ABSTRACT FROM AUTHOR]