1. Nonvolatile transtance change random access memory based on magnetoelectric P(VDF-TrFE)/Metglas heterostructures.
- Author
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Peipei Lu, Dashan Shang, Jianxin Shen, Yisheng Chai, Chuansen Yang, Kun Zhai, Junzhuang Cong, Shipeng Shen, and Young Sun
- Subjects
NONVOLATILE random-access memory ,MAGNETOELECTRONICS ,HETEROSTRUCTURES ,MAGNETOELECTRIC effect ,ELECTRIC fields - Abstract
Transtance change random access memory (TCRAM) is a type of nonvolatile memory based on the nonlinear magnetoelectric coupling effects of multiferroics. In this work, ferroelectric P(VDF-TrFE) thin films were prepared on Metglas foil substrates by the sol-gel technique to form multiferroic heterostructures. The magnetoelectric voltage coefficient of the heterostructure can be switched reproducibly to different levels between positive and negative values by applying selective electric-field pulses. Compared with bulk multiferroic heterostructures, the polarization switching voltage was reduced to 7V. Our facile technological approach enables this organic magnetoelectric heterostructure as a promising candidate for the applications in multilevel TCRAM devices. [ABSTRACT FROM AUTHOR]
- Published
- 2016
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