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Ceramic‐based dielectric capacitor are highly suitable for pulsed power applications due to their high power density and excellent reliability. However, the ultrahigh applied electric field limit their applications in integrated electronic devices. In this work, (1−x){0.96(Bi0.5Na0.5)(Ti0.995Mn0.005)O3‐0.04BiAlO3}‐xNaNbO3 (BNT‐BA‐xNN, x = 0, 0.04, 0.08, 0.12, and 0.16) ternary ceramics were designed to achieve excellent energy storage properties. It was found that the introduction of NaNbO3 (NN) effectively increase the difference (ΔP) between Pmax and Pr, resulting in an obvious enhancement of the energy storage properties. High recoverable energy storage density, responsivity, and power density, that is, Wrec = 2.01 J/cm3, ξ = Wrec/E = 130.69 J/(kV⋅m2), and PD = 25.59 MW/cm3, accompanied with superior temperature stability were realized at x = 0.14 composition. In addition, the thermal stable dielectric properties of the sample can be prominently improved with increasing NN content. The temperature coefficient of capacitance (TCC) of x = 0.16 composition is lower than 15% over the temperature range from 49°C to 340°C, with a high dielectric permittivity of 1647 and a low dielectric loss (0.0107) at 150°C. All these features show that the BNT‐BA‐xNN ceramics are promising materials for energy storage application. [ABSTRACT FROM AUTHOR]

The grinding strain induced ferroelectric (FE) to antiferroelectric (AFE) phase transition with associated hysteresis loops tuning were found in bulk Pb 0.99 (Zr 0.97 Ti 0.03) 0.98 Nb 0.02 O 3 ceramics. The induced AFE phases can keep stable unless applying heat treatment or electric field. The atomic-scale characterizations reveal that the perfect coherent FE/AFE interface appears either diffuse or sharp depending on its relative orientation to polarization. The induced surface AFE layers on FE bulk can tune hysteresis loops from symmetric to asymmetric and this effect increased with the decrease of thickness of samples. These findings provide new pathway for manipulate phase state and discover novel properties in ferroics. Grinding strain induced ferroelectric-antiferroelectric phase transition with hysteresis loops tuning in bulk ceramics. Image, graphical abstract [ABSTRACT FROM AUTHOR]

Reversible domain switching in aged acceptor-doped ferroelectric ceramics is a powerful method to achieve electrostrain due to the exchange of nonequal crystalline axes of domains. Nevertheless, previous work suggested that the strain obtained via reversible domain switching in unpoled ceramics was much lower than theoretical value. In this paper, we demonstrate that the strain in poled and aged acceptor-doped ferroelectric ceramics can be significantly enhanced when the driving electric field is perpendicular to the poling direction, originating from the exchange of nonequel crystalline axes of more domains. Consequently, the electrostrain of poled and aged 0.1 wt% MnO 2 -doped 0.05Pb(Mn 1/3 Sb 2/3 )O 3 −0.50PbZrO 3 −0.45PbTiO 3 could reach 0.225% which was 4.17 times larger than that of unpoled sample under a low electric field of 15 kV cm −1 . Moreover, the corresponding normalized strain d 33 * reached 1500 pm V −1 which significantly exceeded the values reported in ferroelectric ceramics. Our work provide a general effective method to enhance the electrostrain behavior via reversible domain switching in aged acceptor-doped ferroelectric ceramics. [ABSTRACT FROM AUTHOR]