Search

Abstract: This paper reports the effect of a SiCN/Ta bilayer barrier on the electrical properties and thermal stability of single damascene lines for Cu-ultra low k integration. By introducing an additional SiCN layer prior to a Ta barrier, breakdown voltage, line-to-line leakage current and thermal stability could be significantly improved. The increase in the line resistance could be minimized by optimizing the thickness of SiCN layer in the multilayer lines. [Copyright &y& Elsevier]

An additional dielectric barrier layer SiCN was deposited on the sidewalls prior to Ta(N) metal barrier deposition. It was found that the leakage decreased with three to four orders of magnitude and breakdown voltage increased 200% compared with that without SiCN layer after burn-in at 200°C for 40 h. [ABSTRACT FROM AUTHOR]