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Heavy-ion induced anomalous charge collection was observed in 4H-SiC Schottky Barrier Diodes (SBDs). It is suggested that the range of the incident ions with respect to the thickness of the epi-layer, ion energy, and electric-field intensity of the SBD is the key to understanding this observation and understanding the SEB mechanism. [ABSTRACT FROM PUBLISHER]

The transient response of Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with three different gates due to a single ion strike is studied. Comparing the experiment and numerical simulation, it is suggested that the charge enhancement is due to the bipolar effect. We find the bipolar gain depends on the quality of gate oxide. The impact of fixed charge in SiO2 and interface traps at SiC/SiO2 on the charge collection is discussed. [ABSTRACT FROM AUTHOR]

In order to study defects that create deep energy levels in semiconductors which act as carrier traps, Charge Transient Spectroscopy using heavy ion microbeams (HIQTS) was developed at JAEA Takasaki. The HIQTS system was connected with the heavy ion microbeam line of the 3 MV Tandem accelerator. Using the HIQTS system, deep levels in 4H-SiC Schottky barrier diodes irradiated with 3 MeV-protons were studied. As a result, a HIQTS peak with an activation energy of 0.73 eV was observed. In addition, local damage in 6H-SiC pn diodes partially irradiated with 12 MeV-O ion microbeams was studied using HIQTS. With increasing 12 MeV-O ion fluence, charge collection efficiency in locally damaged areas decreased and HIQTS signals increased. [ABSTRACT FROM AUTHOR]