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In this study, transparent Li–N co-doped ZnSnO (ZTO: (Li, N)) thin film transistors (TFTs) with a staggered bottom-gate structure were fabricated by radio frequency magnetron sputtering at room temperature. Emphasis was placed on investigating the effects of post-annealing temperature on their physical and electrical properties. An appropriate post-annealing temperature contributes not only to achieving good quality thin films, but also to improving the electrical performance of the ZTO: (Li, N) TFTs. The ZTO: (Li, N) TFTs annealed at 675 °C showed the best electrical characteristics with a high saturation mobility of 26.8 cm 2 V −1 s −1 , a threshold voltage of 6.0 V and a large on/off current ratio of 4.5×10 7 . [ABSTRACT FROM AUTHOR]

The preparation and electrical properties of ZnO: (Li,N) thin film transistors were studied in this work. The Li–N dual doped ZnO films, as the active layers with thickness varied from 20 to 60 nm, were deposited on SiO 2 /n-type Si substrates by radio frequency magnetron sputtering. The transistor with 30-nm-thick ZnO: (Li,N) film shows the best performance with a field effect mobility of 33.6 cm 2 /V.s, a threshold voltage of −6 V and an on/off current ratio of 1.08 × 10 8 . And the time-dependent instability of the device was studied. The mobility increases to 41.5 cm 2 /V after 120 days, and then decreases to 31.2 cm 2 /V after 180 days, accompanied by a negative shift of threshold voltage and a decrease of on/off ratio as day increases. The main cause of the instability may be the adsorption of humidity from ambient air. [ABSTRACT FROM AUTHOR]