Search

ZnOTe compounds were grown by DC magnetron cosputtering from pure Tellurium (Te) and Zinc (Zn) cathodes in O2/Ar atmosphere. The applied power on the Zn target was constant equal to 100 W, while the one applied on the Te target took two values, i.e., 5 W and 10 W. Thus, two sample series were obtained in which the variable parameter was the distance from the Te targets to the substrate. Sample compositions were determined by Rutherford Backscattering Spectroscopy (RBS) experiments. Structural analysis was done using X-Ray diffraction (XRD) spectrometry and the growth of the hexagonal w-ZnO phase was identified in the XRD spectra. RBS results showed high bulk homogeneity of the samples forming ZnOTe alloys, with variable Te molar fraction (MF) ranging from 0.48–0.6% and from 1.9–3.1% for the sample series obtained at 5 W and 10 W, respectively. The results reflect great differences between the two sample series, particularly from the structural and optical point of view. These experiments point to the possibility of Te doping ZnO with the permanence of intrinsic defects, as well as the possibility of the formation of other Te solid phases when its content increases. The results and appreciable variations in the band gap transitions were detected from Photoluminescence (PL) measurements., This work was supported by the Ministerio de Ciencia, Innovación y Universidades of Spain through the Project RTI2018-095137-B-I00.

We studied the hole concentration dependences of 63Cu Knight shifts in single-CuO2-layer high-Tc cuprate superconductors HgBa2CuO4+d and double-layer HgBa2CaCu2O6+d. We found that the spin Knight shift at room temperature as a function of the hole concentration in the single-layer superconductor is different from that in the double-layer superconductor. Two type relations between the spin Knight shift and the hole doping level serve to estimate the individual hole concentrations of the non-equivalent CuO2 planes in a unit cell., Comment: 4 pages, 4 figures, submitted to Physics Procedia, ISS2014 (27th International Symposium on Superconductivity, Tokyo)

Here, controlled p-type doping of poly(2-methoxy-5-(20-ethylhexyloxy)- pphenylene vinylene) (MEH-PPV) deposited from solution using tetrafluorotetracyanoquinodimethane (F4-TCNQ) as a dopant is presented. By using a co-solvent, aggregation in solution can be prevented and doped films can be deposited. Upon doping the current-voltage characteristics of MEH-PPVbased hole-only devices are increased by several orders of magnitude and a clear Ohmic behavior is observed at low bias. Taking the density dependence of the hole mobility into account the free hole concentration due to doping can be derived. It is found that a molar doping ratio of 1 F4-TCNQ dopant per 600 repeat units of MEH-PPV leads to a free carrier density of 441022m 3. Neglecting the density-dependent mobility would lead to an overestimation of the free hole density by an order of magnitude. The free hole densities are further confirmed by impedance measurements on Schottky diodes based on F4-TCNQ doped MEH-PPV and a silver electrode. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA.

Due to the limitation of the hole injection, p-type doping is essential to improve the performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs). In this work, we propose and show a depletion-region Mg-doping method. Here we systematically analyze the effectiveness of different Mg-doping profiles ranging from the electron blocking layer to the active region. Numerical computations show that the Mg-doping decreases the valence band barrier for holes and thus enhances the hole transportation. The proposed depletion-region Mg-doping approach also increases the barrier height for electrons, which leads to a reduced electron overflow, while increasing the hole concentration in the p-GaN layer. Experimentally measured external quantum efficiency indicates that Mg-doping position is vitally important. The doping in or adjacent to the quantum well degrades the LED performance due to Mg diffusion, increasing the corresponding nonradiative recombination, which is well supported by the measured carrier lifetimes. The experimental results are well numerically reproduced by modifying the nonradiative recombination lifetimes, which further validate the effectiveness of our approach. NRF (Natl Research Foundation, S’pore) ASTAR (Agency for Sci., Tech. and Research, S’pore) Published version

Magnetically doped Si and Ge nanowires have potential application in future nanowire spin-based devices. Here, we report a supercritical fluid method for producing single crystalline Mn-doped Ge nanowires with a Mn-doping concentration of between 0.5-1.0 atomic % that display ferromagnetism above 300 K and a superior performance with respect to the hole mobility of around 340 cm(2)/Vs, demonstrating the potential of using these nanowires as building blocks for electronic devices.

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ∼332 meV to ∼294 meV at 80 A/cm2 and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs. ASTAR (Agency for Sci., Tech. and Research, S’pore) Published version

Single phase bulk Tl2223 samples were prepared in the Tl 2−x z Ba 2 Ca 2+x Cu 3 O 10−y system with x =0.0 to 0.4. Wet chemical analysis shows that all samples are both Tl and O deficient. The T c is found to increase with increasing hole concentration. Ultraviolet photoemission spectroscopic (UVPES) studies of the “as synthesized” Tl 2− x − z Ba 2 Ca 2+ x Cu 3 O 10− y system have been carried out. No shifts in binding energy of valence band features are observed. Instead, doping of Ca at the Tl site creates new electronic states near the Fermi level. Tl 4f core level X-ray photoelectron spectroscopic (XPS) studies show a systematic decrease in BE with x . Systematic changes in the Cu 2p core level spectra are also observed. Possible changes in the valence band structure are suggested.