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We report dramatic improvements to the implanted-planar buried-heterostructure graded-index separate confinement heterostructure (IPBH-GRINSCH) laser in (AlGa)As/GaAs which produces low threshold current, continuous-wave operation. Our process features significantly reduced fabrication complexity of high quality, index-guided laser diodes compared to regrowth techniques and, in contrast to diffusion-induced disordering, allows creation of self-aligned, buried, blocking junctions by ion implantation. The improved single-stripe IPBH-GRINSCH lasers exhibit 39 mA threshold current, cw operation. [ABSTRACT FROM AUTHOR]

We report the first integrated injection-locked high-power continuous-wave diode laser array with an on-chip independently controlled master laser. This device emits a near-diffraction-limited (0.5° full width at half maximum) single-lobed far-field emission beam at single-facet powers up to 125 mW. Also, by current tuning the emission wavelength of the master laser, we observe steering of the single-lobed emission over an angular range of 0.50° at a rate of -1.2×10-2 deg/mA. Our work demonstrates the feasibility of incorporating active optical injection and control in the structure of high-power diode laser devices. [ABSTRACT FROM AUTHOR]