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1. A Novel 60-GHz Monolithic Star Mixer Using Gate-Drain-Connected pHEMT Diodes.

Author

Kyung-Whan Yeom and Du-Hyun Ko

Subjects
*ELECTRON mobility, *TRANSISTORS, *DIODES, *SEMICONDUCTORS, *ELECTRICAL engineering, *ELECTRONICS
Abstract

In this paper, a novel 60-GHz monolithic star mixer using the gate-drain-connected pseudomorphic high electron-mobility transistor (pHEMT) diodes instead of conventional drain-source-connected diodes is proposed. The mixer is fabricated using 0.1-μm GaAs pHEMT process. The measurements show the conversion loss of 13-18 dB over the full V -band (50-75 GHz), local oscillator to RF isolation of approximately 35 dB, and the input 1-dB compression of approximately 3 dBm. [ABSTRACT FROM AUTHOR]

Published
2005
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