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Presents a study which investigated the electric properties of multiple-quantum-well diodes. Experimental procedures; Results and discussion; Conclusion.

Presents a study that examined an interband tunneling effect between gallium-antimony (GaSb) valence-band and indium-arsenic conduction-band quantum wells in a triple-barrier interband tunneling (TBIT) device. Diagram of a TBIT structure under flatband conditions; Information on the room-temperature current-voltage characteristics of TBIT diodes.

Presents a study which examined the effects of GaSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling diode. Device design and fabrication of the structure; Characterization of the device; Structural difference of the double-barrier interband tunneling structure.

Examines the dependence of the interband tunneling current on AlSb barrier widths in the InAs/AlSb/GaSb single-barrier diode structures. Overview of the device fabrication; Details on device characterization.

Presents a study which proposed a GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling diode. Device design and fabrication; Description of the epitaxial layer structures of the device; Characterization of the device.

Presents a study which fabricated an InAs/AlSb/GaSb single-barrier interband tunneling diode by molecular beam epitaxy. Discussion of the transport mechanism in the tunneling structure according to the I-V characteristics as a function of temperature; Reason for the use of AlSb/GaSb/InAs material system in tunneling applications; Room temperature operation of the single-barrier interband tunneling diode.

Presents information on a study which performed capacitance-voltage measurements on the InAs/AlSab/GaSb interband tunneling diode at various frequencies. Structure of the tunneling diode; Details of the conduction band and the associated bound states found in the numerical algorithm; Extraction of the built-in voltage using the capacitance-voltage data under the depletion condition.

For reducing the magnitude of stray current, the diode-grounded system is an improvement over the solidly grounded system, but the rail potential and stray current remain large. However, since the diode device of this system provides a path for stray current, the magnitude of the stray current can be easily and conveniently monitored, and positive-pole earth faults can be inspected. A novel control scheme is proposed. The output voltage of the traction substation is controlled such that it remains constant in the diode-grounded system, thus the magnitude of rail potential and stray current can be reduced. Kaohsiung MRT systems are used as an example of simulating multiple traction substations and multiple trains. The simulation results show that this novel control scheme can greatly reduce the stray current and rail potential. [ABSTRACT FROM AUTHOR]

A dominant deep level with an activation energy of 0.23–0.26 eV was observed by admittance spectroscopy for SnTe-doped GaSb layers grown directly on GaAs substrates by molecular beam epitaxy (MBE). The activation energy and capture cross section of the deep level are similar to the levels detected in S-doped and Te-doped GaSb grown by MBE, indicating that this deep level originates either from a native defect or a common impurity in n-type GaSb. The Sb4/Ga flux ratio was found to affect the Hall mobility and concentration of the deep level in a similar way, with an optimal beam equivalent pressure ratio around 7 obtained for GaSb grown at 550 °C, which should correspond to the lowest ratio to maintain a Sb-stabilized surface reconstruction. Analysis of this result suggests that the deep level seen by us is a complex defect. © 1996 American Institute of Physics. [ABSTRACT FROM AUTHOR]