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The authors analyzed radiative efficiency of InGaN laser diodes (LDs) emitting at 405 nm. Based on semiconductor rate equations, the radiative efficiency is unambiguously determined by the analysis of electroluminescence characteristics. The radiative efficiency exceeds 70% even far below threshold of ∼3 mA at a high temperature of 80 °C. This highly radiative characteristic is attributed to reduced contribution of nonradiative recombination in LDs with low-dislocation-density active material. It is also found that the radiative efficiency is almost independent of threshold current, indicating that nonradiative recombination is not a major factor which determines lasing threshold in 405 nm emitting InGaN LDs having low dislocation density. [ABSTRACT FROM AUTHOR]