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An alternately intermittent oscillation technique was proposed and an intermittent oscillation dual-wavelength diode side-pumped solid-state laser has been set up. The model of rate equations of intermittent oscillation dual-wavelength laser has been considered. By this means, the population inversion was distributed efficiently, mode competition of both laser lines can be avoided, the effect resulted from the accuracy of the coating process can be reduced and the stable output of dual-wavelength was easily obtained. What is more, for different operation condition, the ratio of the output powers can be controlled by changing the delay time, so it is very beneficial to all-solid-state RGB lasers.

We have demonstrated a self-staring passively continuous-wave mode-locked diode end-pumped Nd:YLF laser with a semiconductor saturable absorber mirror of single-quantum-well (In0.25Ga0.75 As) grown by metal-organic chemical-vapor deposition technique at low temperature. The saturable absorber was used as nonlinear absorber and output coupler simultaneously. Stable pulse duration of 3 ps has been achieved at the repetition rate of 98 MHz. The average output power was 530 mW at 1053 nm under the incident pump power of 10 W, corresponding to the peak power of 1.8 kW and pulse energy of 5.4 nJ

Low temperature GaAs (LT-GaAs) was successfully grown at the temperature of 550 degrees C by metal organic vapor phase epitaxy on a semi-insular GaAs substrate. With such an absorber as well as an output coupler we obtain Q-switched mode-locked (QML) 1064 nm Nd:GdVO4 laser pumped by diode laser with high repetition rate, formed with a simple flat-flat cavity. The repetition rate of the Q-switched envelope increased from 100 to 660 kHz as the pump power increased from 2.28 to 7.29 W. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of similar to 1.36 GHz. A maximum average output power of 953 mW was obtained. The dependence of the operational parameters on the pump power was also investigated experimentally. (C) 2005 Elsevier B.V. All rights reserved.

We have demonstrated an efficient and compact passively Q-switched and mode-locked (QML) 1064 nm Nd:YVO4 laser by using a low temperature grown GaAs (LT-GaAs) saturable absorber as well as an output coupler. Stable QML with envelope duration as short as 10 ns and Q-switched repetition rate of 36 kHz was obtained. It is the shortest envelope duration as far as we know, and it is so short that it can be used as Q-switching pulses directly. At 6.9 W of the incident pump power, average output power of 1.24 W was achieved and the corresponding peak power and energy of a single Q-switched pulse were 3.44 kW and 34.4 mu J, respectively. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 780 MHz. (C) 2005 Elsevier B.V. All rights reserved.

Simultaneous Q-switching and mode-locking (QML) is accomplished in a diode-pumped Nd:YAG laser using low-temperature GaAs (LT-GaAs) as the saturable absorber, which also acts as an output coupler at the same time. The repetition rate of the Q-switched envelope increased from 25 to 40 kHz as the pump power increased from 2.2 to 6.9 W. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 714 MHz. A maximum average output power of 770 mW was obtained.

A coherent UV passively Q-switched diode pumped Nd:GdVO4 laser source is proposed. During pumping of the β-BBO crystal a stable light with power 0.6 W with wavelength 532 nm and pulse duration 9 ns at frequency repetition 16 kHz was applied. The output UV light has a power about 79 mW at wavelength 266 nm during diode-pumping with 8 W incident light.

A highly efficient and high power green laser generated by intracavity frequency doubling of a diode-sidepumped Q-switched Nd: YAG laser has been demonstrated. In the simple L-shaped cavity geometry, the maximum green output power of 28.5 W was obtained with a pulse width of 95 ns at a pulse repetition rate of 10 kHz by using a LBO crystal for frequency doubling, corresponding to a conversion efficiency of 11% from diode pump power to pulse green power. At a pulse repetition rate of 1. kHz, 6.9 mJ of pulse energy, 25 ns of pulse duration and 276 kW of peak power were obtained.

With the agility of cavity control in solid-state-laser, we report abundant experimental phenomena of relatively complete Laguerre-Gaussian (LG) transverse multimodes transformation process including both stable and transitional status in a diode pumped Nd:YVO4 microcavity laser. Cavity structure, absorber, pump power, etc, synthetically have been found to contribute such abundant generation of patterns.

The performance of a passively Q-switched all-solid-state Nd:YVO4 laser using Cr4+:YAG as saturable absorber is reported. Optimum coupling operation at 1064 nm resulted in 70 ns pulses at 40 kHz repetition rates with average output power of 2.1 W. A quantitative theoretical description agrees well with the experimental results.

With a type-I noncritically phase-matched LiB3O5 crystal as the intracavity frequency doubler in a diode pumped Nd:YVO4 laser, 440 mW of 671 nm light was obtained at 5.5 W of incident pump power, the optical-optical conversion efficiency being 8.0%.

We have demonstrated a passively mode-locked diode end-pumped all-solid-state laser, which is composed of a Nd:Gd0.5Y0.5VO4 crystal and a folded cavity with a semiconductor saturable-absorber mirror grown by metal-organic chemical-vapor deposition. Stable cw mode locking with a 3.8-ps pulse duration at a repetition rate of 112 MHz was obtained. At 13.6 W of the incident pump power, a clean mode-locked fundamental-mode average output power of 3.9 W was achieved with an overall optical-to-optical efficiency of 29.0%, and the slope efficiency was 38.1%.

A maximum of 5.5 W of cw TEM00 mode output at 532 nm has been obtained by intracavity frequency doubling with a KTP crystal in an Nd: YVO4 laser doubly-pumped with 20 W diode pumping power. The optical-optical conversion efficiency is 27.5%. The influence of thermal lensing at high pumping power in the end-pumped Nd:YVO4 laser is discussed. The Nd:YVO4 laser has a good power stability of 1.6%.

We have demonstrated a diode-pumped Nd:YVO4 laser that produced 273mW cw output at 671nm by using KTP intracavity doubling. The optical-optical efficiency of the all-solid-state red laser was 5.1%. The maximum output power of the fundamental wave at 1342 nm from Nd:YVO4 was 2.3W with slope-efficiency of 43%.