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GaInNAs alloys are mostly used as an active part of light sources for long wavelength telecom applications. Beside this, these materials are used as thin quantum wells (QWs), and a need is to grow thick layers of such semiconductor alloys for photodetectors and photovoltaic cells applications. However, structural characterization of the GaInNAs layers is hindered by non-homogeneity of the In and N distributions along the layer. In this work the challenges of the structural characterization of doped thick GaInNAs layers grown by atmospheric pressure metalorganic vapour phase epitaxy (APMOVPE) will be presented [ABSTRACT FROM AUTHOR]

Determination of indium and nitrogen content in InGaAsN quantum wells (QWs) is often based on the analysis of high-resolution X-ray diffraction (HRXRD) measurements. The comparison of diffraction curves of two similar samples, with and without nitrogen, together with an assumption of constant indium incorporation efficiency during the growth of layers with and without nitrogen, may lead to a large deviation in the determined In and N content. The HRXRD curve simulations supported by bandgap determination and calculations seem to be a solution of this problem. Comparison of the results achieved from simulated HRXRD curves with the calculations of all QWs transitions measured by contactless electro-reflectance (CER) can lead to reduction of deviations in composition determination of InGaAsN quantum wells. The proposed algorithm was applied for investigation of InGaAsN QWs grown by atmospheric pressure metalorganic vapor phase epitaxy (APMOVPE). [ABSTRACT FROM AUTHOR]