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The dielectric loss of Cu with high thermal conductivity is large at high frequency, which cannot meet the performance requirements in high-integrated circuits. There is an urgent need for materials to reduce its dielectric loss. In this paper, the thermal conductivity and dielectric properties of the AlN coating-Cu substrate system were controlled by changing the N2 pressure. The results showed that the crystallinity of hcp-AlN in AlN coating increased significantly when the proportion of N2 pressure was increased. With the increase of the N2 pressure, the particle size on the surface and the roughness of the coating improved. The AlN coating prepared at high N2 pressure had high dielectric constant and low dielectric loss at high frequency compared to those of the coatings prepared at low N2 pressure. At the same time, the AlN coating prepared under high N2 pressure on the Cu substrate did not decrease the thermal conductivity of Cu substrate. The AlN-Cu system prepared in this paper had high thermal conductivity and good dielectric properties, providing theoretical guidance for integrated circuit packaging and capacitor applications. [ABSTRACT FROM AUTHOR]

Thermal conductive materials with low dielectric constant under high frequencies play an important role in high-power integrated circuits packaging. The application of Cu in the packaging substrates is limited due to the high dielectric constant. In this paper, the AlN coatings were deposited on the Cu substrates to maintain the high thermal conductivity and obtain excellent electrical properties for the first time. The microstructure, thermal conductivity and electrical properties of the AlN/Cu systems were adjusted by duty cycles. The results show that improving the duty cycle reduced the hcp-AlN (002) preferred orientation degree of the coatings. The growth structure of the coatings could be regulated by increasing the duty cycle, which induced the grain and particle size first increasing and then decreasing. AlN/Cu systems improved the thermal conductivity of Cu. All coatings show far higher resistivity than Cu and 0.006–0.24 low dielectric loss. The minimum dielectric constant (5.6) of the coating at 2000 kHz frequency was obtained. The AlN/Cu systems in this paper realize high thermal conductivity and excellently dielectric properties, meeting the application in high-power integrated circuit packaging. [ABSTRACT FROM AUTHOR]