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A structure of junction edge termination for the High- K Vertical Diffused Metal Oxide Silicon (H K -VDMOS) is proposed and studied. It consists of two deep trenches filled with SiO 2 and H K dielectric, respectively. The former is mainly used to sustain the surface high voltage, which significantly contributes to reduce the termination width. The latter transmits the strong electric field in the SiO 2 into the source electrode before it reaches the inside H K -VDMOS cells, which ensures the optimized electric field distribution of the inside H K -VDMOS cells is not affected. Therefore, for the total device with termination, high breakdown voltage and ultralow specific on-resistance as well as very small termination width can be simultaneously obtained. Numerical simulation shows that, for an N-type H K -VDMOS (the permittivity is set as K = 300) with the proposed termination, the R on,sp of 26.4 mΩ cm 2 is achieved at a breakdown voltage of 743 V, where the termination width is only 14 μm. [ABSTRACT FROM AUTHOR]

This paper presents a new concept for low cost and high reliability monolithic integration of vertical power devices. The concept relies on the creation of deep trench terminations on the edge of the device, thus allowing to avoid 3 D peak surface electric field levels whereas complete insulation of the integrated power devices sharing the same backside contact electrode is guaranteed. Simulation results show that the stress of the electric field can be further reduced by introducing an angle on the trench termination walls. Power diodes in the range of 600 V with 87° wall angles of the 100-μm deep trench terminations are fabricated to demonstrate the feasibility and the effectiveness of the concept. The multidiode devices were experimentally tested under static and dynamic practical conditions. The fabricated prototypes fulfilled the initial design electrical specifications considering the breakdown voltage rating and demonstrated an excellent functional behavior. The implementation of the multidiode device into an interleaved converter is presented in this paper. [ABSTRACT FROM AUTHOR]