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Tin-Vacancy (Sn-V) colour centres in diamond have a spin coherence time in the millisecond range at temperatures of 2 K, so they are promising to be used in diamond-based quantum optical devices. However, the incorporation of large Sn atoms into a dense diamond lattice is a non-trivial problem. The objective of our work is to use microwave plasma-assisted chemical vapour deposition (CVD) to grow Sn-doped diamond with submicron SnO2 particles as a solid-state source of impurity. Well-faceted diamond microcrystals with sizes of a few micrometres were formed on AlN substrates. The photoluminescence (PL) signal with zero-phonon line (ZPL) peak for Sn-V centre at ≈620 nm was measured at room temperature (RT) and at 7 K. The peak width (full width at half-maximum) was measured to be 1.1–1.7 nm at RT and ≈0.05 nm at 7 K. The observed variations of ZPL shape and position, in particular, narrowing of PL peak at RT and formation of single-line fine structure at low-T, are attributed to strain in the crystallites. The diamond doping with Sn via CVD process offers a new route to from Sn-V colour centre in the bulk of the diamond crystallites. This article is part of the Theo Murphy meeting issue 'Diamond for quantum applications'. [ABSTRACT FROM AUTHOR]

In this work a strategy to grow diamond on β-Ga 2 O 3 has been presented. The ζ-potential of the β-Ga 2 O 3 substrate was measured and it was found to be negative with an isoelectric point at pH ∼ 4.6. The substrates were seeded with mono-dispersed diamond solution for growth of diamond. The seeded substrates were etched when exposed to diamond growth plasma and globules of gallium could be seen on the surface. To overcome problem ∼ 100 nm of SiO 2 and Al 2 O 3 were deposited using atomic layer deposition. The nanodiamond seeded SiO 2 layer was effective in protecting the β-Ga 2 O 3 substrate and thin diamond layers could be grown. In contrast Al 2 O 3 layers were damaged when exposed to diamond growth plasma. The thin diamond layers were characterised with scanning electron microscopy and Raman spectroscopy. Raman spectroscopy revealed the diamond layer to be under compressive stress of 1.3–2.8 GPa. [Display omitted] [ABSTRACT FROM AUTHOR]

Abstract: To fabricate battery‐like supercapacitors with high power and energy densities, big capacitances, as well as long‐term capacitance retention, vertically aligned carbon nanofibers (CNFs) grown on boron doped diamond (BDD) films are employed as the capacitor electrodes. They possess large surface areas, high conductivity, high stability, and importantly are free of binder. The large surface areas result from their porous structures. The containment of graphene layers and copper metal catalysts inside CNFs leads to their high conductivity. Both electrical double layer capacitors (EDLCs) in inert solutions and pseudocapacitors (PCs) using Fe(CN)63−/4− redox‐active electrolytes are constructed with three‐ and two‐electrode systems. The assembled two‐electrode symmetrical supercapacitor devices exhibit capacitances of 30 and 48 mF cm−2 at 10 mV s−1 for EDLC and PC devices, respectively. They remain constant even after 10 000 charging/discharging cycles. The power densities are 27.3 and 25.3 kW kg−1 for EDLC and PC devices, together with their energy densities of 22.9 and 44.1 W h kg−1, respectively. The performance of these devices is superior to most of the reported supercapacitors and batteries. Vertically aligned CNF/BDD hybrid films are thus useful to construct high‐performance battery‐like and industry‐orientated supercapacitors for future power devices. [ABSTRACT FROM AUTHOR]

This study focuses on the self-assembly and subsequent diamond growth on SiO 2 buffered lithium niobate (LNO) and lithium tantalate (LTO) single crystals. The zeta-potential of LNO and LTO single crystal were measured as a function of pH. They were found to be negative in the pH range 3.5–9.5. The isoelectric point for LNO was found to be at pH ∼ 2.91 and that of LTO to be at pH ∼ 3.20. X-ray photoelectron spectroscopy performed on the surfaces show presence of oxygen groups which may be responsible for the negative zeta potential of the crystals. Self-assembly of nanodiamond particles on LTO and LNO, using nanodiamond colloid, were studied. As expected, high nanodiamond density was seen when self-assembly was done using a positively charged nanodiamond particles. Diamond growth was attempted on the nanodiamond coated substrates but they were found to be unsuitable for direct growth due to disintegration of substrates in diamond growth conditions. A ∼ 100 nm thick silicon dioxide layer was deposited on the crystals, followed by nanodiamond self assembly and diamond growth. Thin diamond films were successfully grown on both coated crystals. The diamond quality was analysed by Raman spectroscopy and atomic force microscopy. [Display omitted] [ABSTRACT FROM AUTHOR]

Abstract: In this work we present the fabrication and characterization of superconducting nano-mechanical resonators made from nanocrystalline boron doped diamond (BDD). The oscillators can be driven and read out in their superconducting state and show quality factors as high as 40,000 at a resonance frequency of around 10MHz. Mechanical damping is studied for magnetic fields up to 3T where the resonators still show superconducting properties. Due to their simple fabrication procedure, the devices can easily be coupled to other superconducting circuits and their performance is comparable with state-of-the-art technology. [Copyright &y& Elsevier]

A coplanar waveguide resonator (CPR) is presented for kinetic inductance (L k) and penetration depth (λ L) measurements of superconducting boron doped nanocrystalline diamond (B-NCD) at microwave frequencies of 0.4 to 1.2 GHz and at temperatures below 3 K. Using finite element modelling and experimental measurements, this work demonstrates that thin granular B-NCD films (thickness d ≈ 500 nm) on Si have a large penetration depth ( λ L ≈ 3.8 μm), and therefore an associated high kinetic inductance per square ( L k , □ ≈ 670 to 690 pH/ □). These values are much larger than those typically obtained for films on single crystal diamond, which is likely due to the high granularity of the nanocrystalline films. Based on the measured Q factors of the structure, the calculated surface resistance is found to be around ≈ 1 to 6 μΩ at T < 2 K in the 0.4 to 1.2 GHz range, demonstrating the potential for granular B-NCD for high quality factor superconducting microwave resonators and highly sensitive kinetic inductance detectors. [Display omitted] [ABSTRACT FROM AUTHOR]

The quality of polycrystalline diamond films is heavily dependent on the nucleation and early stages of growth, making the ability to monitor these early stages highly desirable. Spectroscopic ellipsometry (SE) allows for real-time monitoring of the thickness, composition, and morphology of films with sub-nanometre precision. In this work, ex-situ SE spectra were used to develop an optical model for film characterisation, which was then applied to in-situ data. The coalescence of individual crystallites into a single film was observed through a parabolic decrease in void content followed by peaks in sp2 content and surface roughness. These observations were validated using ex-situ Raman spectra and AFM images of samples grown for durations between 5 and 30 min. The model was also used to investigate the impact of varying the methane concentration, finding that a higher methane fraction resulted in earlier coalescence and a higher peak in sp2 content. This work demonstrates that SE is a powerful tool for monitoring and optimisation of the critical early stages of polycrystalline diamond growth. [Display omitted] [ABSTRACT FROM AUTHOR]

The annealing treatment plays a crucial role in tailoring the properties of synthetic diamond materials, especially those doped with various elements in order to form specific color centers like nitrogen-vacancy (NV), silicon-vacancy (Si-V), germanium-vacancy (Ge-V), etc. This study delves into the annealing of 175 μm-thick Ge-doped polycrystalline diamond (PCD) films grown by microwave plasma-assisted chemical vapor deposition (MPCVD). Large-area PCD plate was cut into smaller equivalent 5 × 5 mm2 pieces, which were separately subjected to annealing in microwave plasma in H 2 atmosphere, to annealing in vacuum or to annealing under high-pressure high-temperature conditions (HPHT, 5.9 GPa, 2000 °C). The structure, phase composition and photoluminescence (PL) of samples before and after various annealing processes were investigated. All applied types of annealing enhance both the Si-V and Ge-V lines in PL at room temperature. Increasing annealing temperature leads to gradual decrease of full widths at half-maxima (FWHM) of diamond Raman peak (1332.5 cm−1), as well as Si-V (738 nm) and Ge-V (602 nm) PL peaks. In addition, the limitations for each type of annealing are established. The obtained results are crucial for the design of CVD-grown Ge-doped and Si-doped PCD materials that can be used for applications in photonics such as single photon sources, biomarkers, as well as for the fabrication of optical diamond thermometers. [Display omitted] • Ge-doped PCD film was grown by MPCVD and cut into series of equivalent samples. • Different samples were subjected to different types of annealing: in H 2 plasma, in vacuum, and in HPHT conditions. • The annealing resulted in lowering FWHM of Raman, XRD and PL peaks of samples. [ABSTRACT FROM AUTHOR]

Diamond is a material that offers potential in numerous device applications. In particular, highly boron doped diamond is attractive due to its superconductivity and high Young's Modulus. The fabrication of stable, low resistance, ohmic contacts is essential to ensure proper device function. Previous work has established the efficacy of several methods of forming suitable contacts to diamond at room temperature and above, including carbide forming and carbon soluble metallisation schemes. Herein, the stability of several contact schemes (Ti, Cr, Mo, Ta and Pd) to highly boron doped nanocrystalline diamond was verified down to the cryogenic temperatures with modified Transmission Line Model (TLM) measurements. While all contact schemes remained ohmic, a significant temperature dependency is noted at T c and at the lowest temperatures the contact resistances ranged from Ti/Pt/Au with (8.83 ± 0.10) × 10−4 Ω cm to Ta/Pt/Au with (8.07 ± 0.62) × 10−6 Ω cm. [Display omitted] [ABSTRACT FROM AUTHOR]

Diamond heat-spreaders for gallium nitride (GaN) devices currently depend upon a robust wafer bonding process. Bonding-free membrane methods demonstrate potential, however, chemical vapour deposition (CVD) of diamond directly onto a III-nitride (III–N) heterostructure membrane induces significant thermal stresses. In this work, these thermal stresses are investigated using an analytical approach, a numerical model and experimental validation. The thermal stresses are caused by the mismatch in the coefficient of thermal expansion (CTE) between the GaN/III-N stack, silicon (Si) and the diamond from room temperature to CVD growth temperatures. Simplified analytical wafer bow models underestimate the membrane bow for small sizes while numerical models replicate the stresses and bows with increased accuracy using temperature gradients. The largest tensile stress measured using Raman spectroscopy at room temperature was approximately 1.0 ± 0.2 GPa while surface profilometry shows membrane bows as large as 58 μm. This large bow is caused by additional stresses from the Si frame in the initial heating phase which are held in place by the diamond and highlights challenges for any device fabrication using contact lithography. However, the bow can be reduced if the membrane is pre-stressed to become flat at CVD temperatures. In this way, a sufficient platform to grow diamond on GaN/III-N structures without wafer bonding can be realised. Image 1 [ABSTRACT FROM AUTHOR]

Diamond-based X-ray luminescent composites are robust materials to be used in synchrotrons and free-electron lasers to detect and visualize high-intensity X-ray beams. Such composites consist of luminescent rare-earth (RE) particles embedded into an X-ray transparent diamond matrix. In this work, polycrystalline diamond composites with embedded particles of EuF 3 , SrF 2 :Eu and YAG:Ce were grown by microwave plasma CVD using diamond seeds with an average particle size difference of two orders of magnitude: from 5 nm up to 500 nm, with positive and negative zeta potentials. The structure, phase composition, and luminescent characteristics of the resulting composite films were investigated and analyzed. We found that various particle types can be better-suited for different composites, and the exact seeding should be selected on the case-by-case basis. The direct comparison of various diamond-based composites, grown in the identical CVD conditions but with various luminescent powders, show that YAG:Ce particles in diamond allow achieving a brighter photoluminescence (PL) in comparison to Eu-based fluorides. However, the set of fluoride powders doped with Eu3+ ions allow obtaining unusually narrow (FWHM = 0.9 nm) and intensive line near 611 nm in PL spectra, which might be better-suited for detection and characterization applications rather than a broad peak of Ce with FWHM ≈ 120 nm. [Display omitted] [ABSTRACT FROM AUTHOR]