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The Au–B–C and Cu–B–C growth systems, which do not form borides, have been used for the first time for the synthesis of boron-doped superconducting diamond. In these systems, the graphite-to-diamond transformation occurs at pressures from 8 to 9 GPa and temperatures from 1620 to 1770 K, suitable for commercial-scale production. The presence of boron in melts is assumed to be responsible for the decrease in synthesis temperature in molten copper and the diamond-forming ability of gold-based melts. The synthesized diamond exhibits metallic behavior of conductivity at ordinary temperatures and undergoes a superconducting transition between 4.5 and 2.5 K. [ABSTRACT FROM AUTHOR]

Black diamond is an emerging material for solar applications. The femtosecond laser surface treatment of pristine transparent diamond allows the solar absorptance to be increased to values greater than 90% from semi-transparency conditions. In addition, the defects introduced by fs-laser treatment strongly increase the diamond surface electrical conductivity and a very-low activation energy is observed at room temperature. In this work, the investigation of electronic transport mechanisms of a fs-laser nanotextured diamond surface is reported. The charge transport was studied down to cryogenic temperatures, in the 30–300 K range. The samples show an activation energy of a few tens of meV in the highest temperature interval and for T < 50 K, the activation energy diminishes to a few meV. Moreover, thanks to fast cycles of measurement, we noticed that the black-diamond samples also seem to show a behavior close to ferromagnetic materials, suggesting electron spin influence over the transport properties. The mentioned properties open a new perspective in designing novel diamond-based biosensors and a deep knowledge of the charge-carrier transport in black diamond becomes fundamental. [ABSTRACT FROM AUTHOR]

The presence of boron in the structure of diamond is rare in nature, and even when present, reported values are ≤ 0.5 ppm. This study used various spectroscopic methods and time-of-fight (ToF-) SIMS to characterize and analyze for boron in natural type IIb blue diamonds, including the well-known Hope and the Blue Heart diamonds, and on one high- pressure, high-temperature annealed natural stone. Infrared spectroscopy measurements reveal uncompensated boron values as large as 1.72 ± 0.15 ppm, which is significantly higher than the previously reported maximum of 0.5 ppm. ToF-SIMS analyses gave spot total boron concentrations as high as 8.4 ± 1.1 ppm for the Hope diamond to less than 0.08 ppm in other blue diamonds. By comparison, a type Ia diamond did not show detectable boron. ToF-SIMS analyses revealed strong zoning of boron in some diamonds, which was confirmed by mapping the uncompensated boron using synchrotron infrared spectroscopy. This greater range of boron concentrations compared to previous studies might be explained by the larger number of natural diamonds analyzed here, 78, compared to <10 samples reported in the literature. The samples in this study are all gem-quality diamonds, including some Intense to Fancy-Deep blue diamonds; color intensity, however, only loosely correlates with the boron content. Boron is also likely responsible for the phosphorescence emissions of type IIb diamonds, in the red at 660 nm and in the blue- green at 500 nm. Our results are consistent with previous work suggesting that the emissions are caused by donor-acceptor pair recombination processes involving boron and other defects. The exact nature of the phosphorescence processes is still not fully understood, but likely involves complex steps of charge carrier trapping and detrapping. [ABSTRACT FROM AUTHOR]

The aim of this review is to provide a survey of the recent advances and the main remaining challenges related to the ultrananocrystalline diamond (UNCD) nanowires and other nanostructures which exhibit excellent capability as the core components for many diverse novel sensing devices, due to the unique material properties and geometry advantages. The boron or nitrogen doping introduced in the gas phase during deposition promotes p-type or n-type conductivity. With the establishment of the UNCD nanofabrication techniques, more and more nanostructure-based devices are being explored in measuring basic physical and chemical parameters via classic and quantum methods, as exemplified by gas sensors, ultraviolet photodetectors, piezoresistance effect-based devices, biological applications and biosensors, and nitrogen-vacancy color center-based magnetic field quantum sensors. Highlighted finally are some of the remaining challenges and the future outlook in this area. [ABSTRACT FROM AUTHOR]

The Marcus model, well known as a general model for electron transfer, is applied to electron pair formation and transfer in systems characterized by neighboring superconducting and local phases, particularly boron-doped diamond and cuprates. Hubbard- U is identified with the adiabatic free energy difference between charged and spin-coupled configurations. Typical for the Marcus model is the coupling of electronic and nuclear coordinates due to structural changes with number of electrons during electron transfer or excitation. [ABSTRACT FROM AUTHOR]

In this work, we investigate the surface transfer doping process that is induced between hydrogen-terminated (100) diamond and the metal oxides, MoO3 and V2O5, through simulation using a semi-empirical Density Functional Theory (DFT) method. DFT was used to calculate the band structure and charge transfer process between these oxide materials and hydrogen terminated diamond. Analysis of the band structures, density of states, Mulliken charges, adsorption energies and position of the Valence Band Minima (VBM) and Conduction Band Minima (CBM) energy levels shows that both oxides act as electron acceptors and inject holes into the diamond structure. Hence, those metal oxides can be described as p-type doping materials for the diamond. Additionally, our work suggests that by depositing appropriate metal oxides in an oxygen rich atmosphere or using metal oxides with high stochiometric ration between oxygen and metal atoms could lead to an increase of the charge transfer between the diamond and oxide, leading to enhanced surface transfer doping. [ABSTRACT FROM AUTHOR]