Search

Deposition of a consistent diamond coating on intricate surfaces has historically posed a difficulty. This article presents the advancement in research on depositing a uniform diamond coating on three-dimensional (3D) silicon spheres, utilizing a faraday cage within a microwave plasma chemical vapor deposition (MPCVD) reactor. A self-consistent three-dimensional multi-physics field model has been established for simulating the microwave electric field and plasma inside a reactor with or without a faraday cage. Results indicate the cage effectively reduces the discharge at the top of the silicon sphere and improves uniformity of the distribution of the microwave electric field and plasma electron density on the sphere's surface. MPCVD trials have demonstrated that a powerful discharge takes place at the apex of the silicon sphere resulting in an excessive thermal gradient if the cage is not added. The apex of the silicon sphere is covered with a blend of diamond and graphite phases. Due to the excessive internal stress of the coating, approximately 50 % of the samples experience coating detachment. After the addition of the cage, the strong discharge is transferred to the top of the cage, effectively suppressing the microwave electric field and plasma inside the cage. Improved quality, reduced internal stress, and enhanced uniformity of the polycrystalline diamond coating are achievable on the silicon spheres within the cage. Moreover, this technique offers a novel approach to coat diamond on complex 3D geometries. [Display omitted] • Three-dimensional multi-physics modeling verifies that faraday cage suppresses microwave electric field and plasma. • The Faraday cage improves the uniformity of the distribution of microwave electric fields and plasma in the internal space. • Uniform, high crystal quality, low stress diamond coating. [ABSTRACT FROM AUTHOR]

• A self-consistent multi-physics coupling model including microwave electromagnetic field, plasma field and fluid heat transfer field is established. • CH 4 -H 2 plasma characteristics from 18 to 100 W∙cm−3. • Kinetics of CH 4 -H 2 plasma chemical reaction at high average power density. • High-rate growth of high-quality Φ 60 mm diamond films at high average power density of 100 W∙cm−3. Investigating the mechanism behind the high-efficiency deposition of high-quality diamond has always been a prominent topic in related research. This paper investigates the CH 4 -H 2 plasma characteristics and related chemical reaction kinetics in the average power density range of 18–100 W·cm−3, which is a typical range for large-area diamond film deposition. The number densities of H, CH 3 and C 2 H 2 increase linearly with the average power density. C 2 H 2 is the main hydrocarbon in the discharge, and CH 3 is the main single-carbon hydrocarbon. The number density and radial uniformity of CH 3 and C 2 H 2 increase with the average power density, which is necessary for the high rate and uniform deposition of diamond films. The plasma's optical emission spectra indicate an acceleration in the C 2 production rate at high power density. The diamond film deposition experiment demonstrates the efficacy of high average power density in achieving high-quality diamond deposition at a high growth rate. [ABSTRACT FROM AUTHOR]