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During the epitaxial growth process of diamond heat sinks, nitrogen impurities are usually unintentionally introduced, which impact on the thermal conductivity. Therefore, the effect of nitrogen doping on the thermal conductivity of diamond heat sink is studied in this paper. The change of thermal conductivity conforms to the K = CT−1+A(B1/T)T5/2, which is attributed to the synergistic effects of phonons and carriers. With the increase of the nitrogen concentration, the downward trend of thermal conductivity gradually flattened and began to show a weak upward trend. This phenomenon is attributed to the anharmonic effect of lattice vibration rather than an increase in the number of conduction electrons. [ABSTRACT FROM AUTHOR]

• The RMS of B-O co-doped diamond is only 0.16 nm at O 2 /H 2 ratio of 1%. • The FWHM of XRD decreases from 52.6 to 37.0 arcsec by introducing oxygen. • The substitution of oxygen into diamond lattice could inhibit nitrogen related defects. • Well-performed electrical properties of 892 cm2/V·s@4.5 × 1014 cm−3 is obtained. In this work, high quality boron-oxygen co-doped homoepitaxial diamond has been proposed. The morphology of diamond was smooth and flat with the O 2 /H 2 ratios less than 1%. The X-ray diffraction, Photoluminescence and Raman spectroscopy illustrated that the substitution of oxygen into diamond lattice could inhibit nitrogen related defects and improve the crystallinity. The Raman mapping showed that tensile stress were formed from film surface to substrate. Under the O 2 /H 2 ratio of 1%, the mobility of 892 cm2/V·s at boron concentration of 4.7 × 1017 cm−3 were obtained, which showed decent electrical properties. [ABSTRACT FROM AUTHOR]