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The charge transport properties of a high-purity CdMnTe (CMT) crystal have been measured at room temperature down to a micron-scale resolution. The CMT crystal, doped with indium, was grown by the vertical Bridgman technique. To reduce the residual impurities in the Mn source material, the growth process incorporated a five-times purification process of MnTe by a zone-refining method with molten Te solvent. The resulting 2.6 mm thick crystal exhibited an electron mobility-lifetime product of \mun\taun=2.9\times 10^{-3}~cm^{2}V^{-1}. The velocity of electron drift was calculated from the rise time distribution of the preamplifier's output pulses at each measured bias. The electron mobility was extracted from the electric field dependence of the drift velocity and at room temperature it has a value of \mun=(950\pm 90)~cm^{2}/Vs. High-resolution maps of the charge collection efficiency have been measured using a scanning microbeam of 5.5 MeV ^4He^2+ ions focused to a beam diameter < 1~\mum and display large-area spatial uniformity. The evolution of charge collection uniformity across the detector has been highlighted by acquiring measurements at applied biases ranging between 50 V and 1100 V. Charge transport inhomogeneity has been associated with the presence of bulk defects. It has been demonstrated that minimizing the content of impurities in the MnTe source material is highly effective in achieving major improvements in the CMT detector's performance as compared to previous data. [ABSTRACT FROM PUBLISHER]

This paper presents the growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe) crystals grown by the vertical Bridgman technique. The 10\,\times\,10\,\times\,1.9 mm^3 samples have been fabricated, and the charge collection properties of the CdMnTe detectors have been measured. Alpha-particle spectroscopy measurements have yielded an average charge collection efficiency approaching 100%. Ion beam induced charge (IBIC) measurements have been performed by raster scanning focused 5.5 MeV ^4He beams onto the detectors. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of Te inclusions within the detector bulk, and the reduction in charge collection efficiency in their locality has been quantified. It has been shown that the role of Te inclusions in degrading charge collection is reduced with increasing values of bias voltage. IBIC measurements for a range of low biases have highlighted the evolution of the charge collection uniformity across the detectors. [ABSTRACT FROM PUBLISHER]