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Abstract: The method of the electrode deposition process plays a vital role in determining the contact characteristics, which is often one of the dominant factors influencing the CdZnTe detector performance. In this work, a modified deposition process named two-step process for the electrode fabrication of CdZnTe detectors, was developed. This deposition process can dramatically increase the adhesion strength and reduce the inhomogeneity of the metal/semiconductor interface, and improve the detection ability of high energy radiation such as X-rays and gamma-rays. Scanning acoustic microscopy, shear tests, current–voltage test and energy spectra characteristics measurements were carried out in this work. [Copyright &y& Elsevier]

Abstract: The characteristics of the Au contacts deposited by three different processes before and after accelerating aging tests have been investigated in this paper. The experimental results indicate that the aging tests can cause the degradation of the contact interfacial properties, such as continuities, adhesion strength and ohmic characteristics, especially for the contact electrode deposited by the thermal vacuum evaporation, which would influence the performance of CdZnTe detectors. [Copyright &y& Elsevier]

Abstract: The design and fabrication of a capacitive Frisch grid structure for CdZnTe (CZT) detector have been investigated in this paper. The simulation results show that a bigger ratio of L/H (metal screen ring length/device height) with the ratio of ɛr /d at 20 mm−1 (relative dielectric constant/the thickness of insulation layer) helps to compress the weighting potential towards the anode, and therefore to improve the energy resolution as showed by the experimental results. The capacitive Frisch grid structures significantly improve spectroscopic performance of planar CZT detectors. In particular, a passivation layer obtained by two-step passivation processing, combined with a Teflon tape was used for an insulated layer of the capacitive Frisch grid detector which can be applied at high voltage. A typical FWHM energy resolution of 4.58% at 662 keV was obtained for a device with dimensions of 5 × 5 × 10 mm3. [Copyright &y& Elsevier]