1. Silicon Detectors for Low Energy Particle Detection.
- Author
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Tindall, C. S., Palaio, N. P., Ludewigt, B. A., Holland, S. E., Larson, D. E., Curtis, D. W., McBride, S. E., Moreau, T., Lin, R. P., and Angelopoulos, V.
- Subjects
SILICON diodes ,THERMAL electrons ,PHOSPHORUS ,SILICON ,ELECTRONS ,PROTONS ,DETECTORS ,GRINDING & polishing ,SOLAR radiation - Abstract
Silicon detectors with very thin entrance contacts have been fabricated for use in the IMPACT SupraThermal Electron (STE) instrument on the STEREO mission and for the Solid State Telescopes on the THEMIS mission. The silicon diode detecters were fabricated using a 200 Å thick phosphorous doped polysili con layer that formed the thin entrance window. A 200 Å thick aluminum layer was deposited on top of the polysilicon in order to reduce their response to stray light. Energy loss in the entrance contact was about 350 eV for electrons and about 2.3 keV for protons. The highest detector yield was obtained using a process in which the thick polysilicon gettering layer was removed by chemical etching rather than chemical mechanical polishing. [ABSTRACT FROM AUTHOR]
- Published
- 2008
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