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The atomic structure and surface energies of several low-index surfaces (0001), ( 1 1 ¯ 00 ) and ( 11 2 ¯ 0 ) of Ti5Si3 in dependence on their termination were calculated by the projector augmented-wave method within the density functional theory. It was revealed that the mixed TiSi-terminated (0001) surface is stable within the wide range of change in the Ti chemical potential. However, the Ti-terminated Ti5Si3(0001) surface is slightly lower in energy in the Ti-rich limit. The oxygen adsorption on the stable Ti5Si3(0001) surface with TiSi termination was also studied. It was shown that the three-fold coordinated F1 position in the center of the triangle formed by surface titanium atoms is the most preferred for oxygen adsorption on the surface. The appearance of silicon as neighbors of oxygen in other considered F-positions leads to a decrease in the adsorption energy. The factors responsible for the increase/decrease in the oxygen adsorption energy in the considered positions on the titanium silicide surface are discussed. [ABSTRACT FROM AUTHOR]

Ab initiocalculations using plane wave pseudopotential method within density funtional theory are applied to investigate mechanical and electronic properties of Al-terminated Me(1 1 1)/Al2O3(0 0 0 1) (Me = Al, Ag, Cu, Nb) interfaces. Stress–displacement relationships of separation perpendicular to the interface are calculated. It is shown that obtained results such as work of separation and tensile strength can be understood from electronic structure. [ABSTRACT FROM AUTHOR]

Interfacial bonding of three different semi-coherent bcc-Fe(110)/graphene interfaces is investigated using the plane-wave pseudopotential method within density functional theory. The analysis of bond lengths, charge densities, charge transfer, magnetic moments and densities of states shows that interfacial adhesion can be understood from the electronic structure. Graphene is considered on Fe(110) surfaces as well as embedded in (110) planes of bulk Fe. Moreover, the influence of single vacancies in graphene is studied in case of graphene on the Fe(110) surfaces. It is found that a single vacancy in graphene leads to a strong increase of interfacial adhesion. The most important contribution to the adhesion is covalent bonding with hybridization of Fe states and C states which is most pronounced for neighboring atoms of the vacancy. [Display omitted] • bcc-Fe(110)/graphene interfaces exhibit strong adhesion due to covalent Fe–C bonds. • Single vacancies in graphene lead to a strong increase of adhesion. • Large magnetic moments are induced at C atoms neighboring a single vacancy. [ABSTRACT FROM AUTHOR]

• B substitution of a C atom increases the work of separation on the Fe(110) surface. • There is almost no effect of N on the graphene/Fe(110) interface. • B and N impurities affect the charge states of the nearest C atoms. • Impurities influence on the magnetic state of the nearest Fe atoms. Influence of B and N substitutional impurities on the adhesion properties, electronic and magnetic characteristics of the external and internal graphene/Fe(110) semi-coherent interface was investigated by the projector augmented-wave method within the density functional theory. The analysis of interatomic distances, charge densities, charge transfer and magnetic states of atoms was performed. It was shown that B-doped graphene has a higher adhesion energy on the Fe(110) surface and in the iron bulk in comparison with the undoped systems; whereas, N-doped graphene in the Fe bulk demonstrates the opposite trend and on the surface it has no effect. Boron acts as electron donor that increases charges of the nearest C atoms by 0.5–0.6 e. Nitrogen due to its high electronegativity is an acceptor and as a result the nearest C atoms lose 0.2–0.3 e. Both impurities, depending on the position, influence differently on the magnetic moment of the nearest iron atoms. [Display omitted] [ABSTRACT FROM AUTHOR]

Co(0001)/TaC(01 2 ¯) interfaces with Re impurities are investigated using the plane-wave pseudopotential method within density functional theory. Two interface configurations and several interfacial sites for Re impurities are considered. The calculations reveal that Re doping can lead to more favourable interfaces with lower interface energies. It is shown that the decrease of interface energy can be understood from the electronic structure. Analyses of bond lengths, overlap populations, charge density distributions and densities of state demonstrate the importance of C-Co and C-Re bonds across the interface. Image 1 • Interfacial Re impurities increase interface strength. • Increased interface strength is mainly caused by strong C-Re covalent bonds. • Most favourable configuration of Co/TaC interface is changed by Re doping. [ABSTRACT FROM AUTHOR]